Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells
Understanding the mechanisms controlling the spin coherence of electrons in semiconductors is essential for designing structures for quantum computing applications. Using a pulsed electron paramagnetic resonance spectrometer, we measure spin echoes and deduce a spin coherence time (T2) of up to 3 mu...
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| Veröffentlicht in: | Physical review letters 2005-04, Vol.94 (12), p.126802.1-126802.4, Article 126802 |
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| container_end_page | 126802.4 |
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| container_issue | 12 |
| container_start_page | 126802.1 |
| container_title | Physical review letters |
| container_volume | 94 |
| creator | TYRYSHKIN, A. M LYON, S. A JANTSCH, W SCHÄFFLER, F |
| description | Understanding the mechanisms controlling the spin coherence of electrons in semiconductors is essential for designing structures for quantum computing applications. Using a pulsed electron paramagnetic resonance spectrometer, we measure spin echoes and deduce a spin coherence time (T2) of up to 3 mus for an ensemble of free two-dimensional electrons confined in a Si/SiGe quantum well. The decoherence can be understood in terms of momentum scattering causing fluctuating effective Rashba fields. Further confining the electrons into a nondegenerate (other than spin) ground state of a quantum dot can be expected to eliminate this decoherence mechanism. |
| doi_str_mv | 10.1103/PhysRevLett.94.126802 |
| format | Article |
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| language | eng |
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| source | American Physical Society Journals |
| subjects | Classical and quantum physics: mechanics and fields Exact sciences and technology Physics Quantum computation Quantum information |
| title | Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells |
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