Less strain energy despite fewer misfit dislocations: the impact of ordering

The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these...

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Veröffentlicht in:	Physical review letters 2006-02, Vol.96 (6), p.066101-066101, Article 066101
Hauptverfasser:	Schmidt, Th, Kröger, R, Flege, J I, Clausen, T, Falta, J, Janzen, A, Zahl, P, Kury, P, Kammler, M, Horn-von Hoegen, M
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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