Role of strain-dependent surface energies in Ge/Si(100) island formation

Role of strain-dependent surface energies in Ge/Si(100) island formation

Formation energies for Ge/Si(100) pyramidal islands are computed combining continuum calculations of strain energy with first-principles-computed strain-dependent surface energies. The strain dependence of surface energy is critically impacted by the presence of strain-induced changes in the Ge {100...

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Veröffentlicht in:Physical review letters 2005-05, Vol.94 (17), p.176102.1-176102.4, Article 176102
Hauptverfasser: SHKLYAEV, O. E, BECK, M. J, ASTA, M, MIKSIS, M. J, VOORHEES, P. W
Format: Artikel
Sprache:eng
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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container_end_page 176102.4
container_issue 17
container_start_page 176102.1
container_title Physical review letters
container_volume 94
creator SHKLYAEV, O. E
BECK, M. J
ASTA, M
MIKSIS, M. J
VOORHEES, P. W
description Formation energies for Ge/Si(100) pyramidal islands are computed combining continuum calculations of strain energy with first-principles-computed strain-dependent surface energies. The strain dependence of surface energy is critically impacted by the presence of strain-induced changes in the Ge {100} surface reconstruction. The appreciable strain dependencies of rebonded-step {105} and dimer-vacancy-line-reconstructed {100} surface energies are estimated to give rise to a significant reduction in the surface contribution to island formation energies.
doi_str_mv 10.1103/PhysRevLett.94.176102
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_67852312</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>67852312</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-fc5fdcb6af88c72af0cf5cef35935944f3191b05f68d913145ee166ca193a4c93</originalsourceid><addsrcrecordid>eNpNkE1LAzEQhoMotlZ_gpKLoodtZzb7laMUbYWCUvW8pNmJRvajJrtC_70rXagwMJfnnXl5GLtEmCKCmL187vyaflbUtlMZTTFNEMIjNkZIZZAiRsdsDCAwkADpiJ15_wUAGCbZKRthLCESGI3Zct2UxBvDfeuUrYOCtlQXVLfcd84oTZxqch-WPLc1X9Ds1d4iwB23vlR1wU3jKtXapj5nJ0aVni6GPWHvjw9v82Wwel48ze9XgRYibQOjY1PoTaJMluk0VAa0iTUZEct-osgIlLiB2CRZIbGvGBNhkmiFUqhISzFhN_u7W9d8d-TbvLJeU9m3oabzeZJmcSgw7MF4D2rXeO_I5FtnK-V2OUL-pzD_pzCXUb5X2OeuhgfdpqLikBqc9cD1ACivVWmcqrX1By7J-vd9h1_OhHvo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>67852312</pqid></control><display><type>article</type><title>Role of strain-dependent surface energies in Ge/Si(100) island formation</title><source>American Physical Society Journals</source><creator>SHKLYAEV, O. E ; BECK, M. J ; ASTA, M ; MIKSIS, M. J ; VOORHEES, P. W</creator><creatorcontrib>SHKLYAEV, O. E ; BECK, M. J ; ASTA, M ; MIKSIS, M. J ; VOORHEES, P. W</creatorcontrib><description>Formation energies for Ge/Si(100) pyramidal islands are computed combining continuum calculations of strain energy with first-principles-computed strain-dependent surface energies. The strain dependence of surface energy is critically impacted by the presence of strain-induced changes in the Ge {100} surface reconstruction. The appreciable strain dependencies of rebonded-step {105} and dimer-vacancy-line-reconstructed {100} surface energies are estimated to give rise to a significant reduction in the surface contribution to island formation energies.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.94.176102</identifier><identifier>PMID: 15904314</identifier><identifier>CODEN: PRLTAO</identifier><language>eng</language><publisher>Ridge, NY: American Physical Society</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Physical review letters, 2005-05, Vol.94 (17), p.176102.1-176102.4, Article 176102</ispartof><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-fc5fdcb6af88c72af0cf5cef35935944f3191b05f68d913145ee166ca193a4c93</citedby><cites>FETCH-LOGICAL-c337t-fc5fdcb6af88c72af0cf5cef35935944f3191b05f68d913145ee166ca193a4c93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,2876,2877,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=16831252$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/15904314$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>SHKLYAEV, O. E</creatorcontrib><creatorcontrib>BECK, M. J</creatorcontrib><creatorcontrib>ASTA, M</creatorcontrib><creatorcontrib>MIKSIS, M. J</creatorcontrib><creatorcontrib>VOORHEES, P. W</creatorcontrib><title>Role of strain-dependent surface energies in Ge/Si(100) island formation</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>Formation energies for Ge/Si(100) pyramidal islands are computed combining continuum calculations of strain energy with first-principles-computed strain-dependent surface energies. The strain dependence of surface energy is critically impacted by the presence of strain-induced changes in the Ge {100} surface reconstruction. The appreciable strain dependencies of rebonded-step {105} and dimer-vacancy-line-reconstructed {100} surface energies are estimated to give rise to a significant reduction in the surface contribution to island formation energies.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNpNkE1LAzEQhoMotlZ_gpKLoodtZzb7laMUbYWCUvW8pNmJRvajJrtC_70rXagwMJfnnXl5GLtEmCKCmL187vyaflbUtlMZTTFNEMIjNkZIZZAiRsdsDCAwkADpiJ15_wUAGCbZKRthLCESGI3Zct2UxBvDfeuUrYOCtlQXVLfcd84oTZxqch-WPLc1X9Ds1d4iwB23vlR1wU3jKtXapj5nJ0aVni6GPWHvjw9v82Wwel48ze9XgRYibQOjY1PoTaJMluk0VAa0iTUZEct-osgIlLiB2CRZIbGvGBNhkmiFUqhISzFhN_u7W9d8d-TbvLJeU9m3oabzeZJmcSgw7MF4D2rXeO_I5FtnK-V2OUL-pzD_pzCXUb5X2OeuhgfdpqLikBqc9cD1ACivVWmcqrX1By7J-vd9h1_OhHvo</recordid><startdate>20050506</startdate><enddate>20050506</enddate><creator>SHKLYAEV, O. E</creator><creator>BECK, M. J</creator><creator>ASTA, M</creator><creator>MIKSIS, M. J</creator><creator>VOORHEES, P. W</creator><general>American Physical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20050506</creationdate><title>Role of strain-dependent surface energies in Ge/Si(100) island formation</title><author>SHKLYAEV, O. E ; BECK, M. J ; ASTA, M ; MIKSIS, M. J ; VOORHEES, P. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-fc5fdcb6af88c72af0cf5cef35935944f3191b05f68d913145ee166ca193a4c93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SHKLYAEV, O. E</creatorcontrib><creatorcontrib>BECK, M. J</creatorcontrib><creatorcontrib>ASTA, M</creatorcontrib><creatorcontrib>MIKSIS, M. J</creatorcontrib><creatorcontrib>VOORHEES, P. W</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SHKLYAEV, O. E</au><au>BECK, M. J</au><au>ASTA, M</au><au>MIKSIS, M. J</au><au>VOORHEES, P. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of strain-dependent surface energies in Ge/Si(100) island formation</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2005-05-06</date><risdate>2005</risdate><volume>94</volume><issue>17</issue><spage>176102.1</spage><epage>176102.4</epage><pages>176102.1-176102.4</pages><artnum>176102</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><coden>PRLTAO</coden><abstract>Formation energies for Ge/Si(100) pyramidal islands are computed combining continuum calculations of strain energy with first-principles-computed strain-dependent surface energies. The strain dependence of surface energy is critically impacted by the presence of strain-induced changes in the Ge {100} surface reconstruction. The appreciable strain dependencies of rebonded-step {105} and dimer-vacancy-line-reconstructed {100} surface energies are estimated to give rise to a significant reduction in the surface contribution to island formation energies.</abstract><cop>Ridge, NY</cop><pub>American Physical Society</pub><pmid>15904314</pmid><doi>10.1103/PhysRevLett.94.176102</doi><tpages>1</tpages></addata></record>
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Role of strain-dependent surface energies in Ge/Si(100) island formation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T08%3A04%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Role%20of%20strain-dependent%20surface%20energies%20in%20Ge/Si(100)%20island%20formation&rft.jtitle=Physical%20review%20letters&rft.au=SHKLYAEV,%20O.%20E&rft.date=2005-05-06&rft.volume=94&rft.issue=17&rft.spage=176102.1&rft.epage=176102.4&rft.pages=176102.1-176102.4&rft.artnum=176102&rft.issn=0031-9007&rft.eissn=1079-7114&rft.coden=PRLTAO&rft_id=info:doi/10.1103/PhysRevLett.94.176102&rft_dat=%3Cproquest_cross%3E67852312%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=67852312&rft_id=info:pmid/15904314&rfr_iscdi=true