Effects of inversion asymmetry on electron-nuclear spin coupling in semiconductor heterostructures : Possible role of spin-orbit interactions
We show that electron-nuclear spin coupling in semiconductor heterostructures is strongly modified by their potential inversion asymmetry. This is demonstrated in a GaAs quantum well, where we observe that the current-induced nuclear spin polarization at Landau-level filling factor nu=2/3 is complet...
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Veröffentlicht in: | Physical review letters 2005-04, Vol.94 (14), p.146601.1-146601.4, Article 146601 |
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container_title | Physical review letters |
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creator | HASHIMOTO, Katsushi MURAKI, Koji KUMACA, Norio SAKU, Tadashi HIRAYAMA, Yoshiro |
description | We show that electron-nuclear spin coupling in semiconductor heterostructures is strongly modified by their potential inversion asymmetry. This is demonstrated in a GaAs quantum well, where we observe that the current-induced nuclear spin polarization at Landau-level filling factor nu=2/3 is completely suppressed when the quantum well is made largely asymmetric with gate voltages. Furthermore, we find that the nuclear spin relaxation rate is also modified by the potential asymmetry. These findings strongly suggest that even a very weak Rashba spin-orbit interaction can play a dominant role in determining the electron-nuclear spin coupling. |
doi_str_mv | 10.1103/physrevlett.94.146601 |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Physics Spin polarized transport |
title | Effects of inversion asymmetry on electron-nuclear spin coupling in semiconductor heterostructures : Possible role of spin-orbit interactions |
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