Preparation and Electrical Properties of Ultrafine Ga2O3 Nanowires

Preparation and Electrical Properties of Ultrafine Ga2O3 Nanowires

Uniform and well-crystallized β-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor−liquid−solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact propertie...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:The journal of physical chemistry. B 2006-01, Vol.110 (2), p.796-800
Hauptverfasser: Huang, Yang, Yue, Shuanglin, Wang, Zhongli, Wang, Qiang, Shi, Chengying, Xu, Z, Bai, X. D, Tang, Chengcun, Gu, Changzhi
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 800
container_issue 2
container_start_page 796
container_title The journal of physical chemistry. B
container_volume 110
creator Huang, Yang
Yue, Shuanglin
Wang, Zhongli
Wang, Qiang
Shi, Chengying
Xu, Z
Bai, X. D
Tang, Chengcun
Gu, Changzhi
description Uniform and well-crystallized β-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor−liquid−solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Ω·m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.
doi_str_mv 10.1021/jp055844p
format Article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_67652487</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>67652487</sourcerecordid><originalsourceid>FETCH-LOGICAL-a273t-a99a32c5214c0d6a4245e3e6db7c981cad03b5f58f31e74eb2c9f7b4b4c8edcd3</originalsourceid><addsrcrecordid>eNo9kEtLw0AUhQdRbH0s_AOSje6i8550qVWrULVo68LNcDO5gdQ0iTMJ6r830trF4R64HwfOIeSE0QtGObtcNlSpRMpmhwyZ4jTuZXY3XjOqB-QghCWlXPFE75MB09IwTdWQXM88NuChLeoqgiqLbkt0rS8clNHM1w36tsAQ1Xm0KFsPeVFhNAH-LKInqOqvwmM4Ins5lAGPN_eQLO5u5-P7ePo8eRhfTWPgRrQxjEYguFOcSUczDZJLhQJ1lho3SpiDjIpU5SrJBUMjMeVulJtUptIlmLlMHJLzdW7j688OQ2tXRXBYllBh3QWrjVZcJqYHTzdgl64ws40vVuB_7H_rHojXQBFa_N7-wX_0IcIoO5-9Wja5eX1_e3m01z1_tubBBbusO1_1PS2j9m99u11f_AJUSnOe</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>67652487</pqid></control><display><type>article</type><title>Preparation and Electrical Properties of Ultrafine Ga2O3 Nanowires</title><source>ACS Publications</source><creator>Huang, Yang ; Yue, Shuanglin ; Wang, Zhongli ; Wang, Qiang ; Shi, Chengying ; Xu, Z ; Bai, X. D ; Tang, Chengcun ; Gu, Changzhi</creator><creatorcontrib>Huang, Yang ; Yue, Shuanglin ; Wang, Zhongli ; Wang, Qiang ; Shi, Chengying ; Xu, Z ; Bai, X. D ; Tang, Chengcun ; Gu, Changzhi</creatorcontrib><description>Uniform and well-crystallized β-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor−liquid−solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Ω·m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.</description><identifier>ISSN: 1520-6106</identifier><identifier>EISSN: 1520-5207</identifier><identifier>DOI: 10.1021/jp055844p</identifier><identifier>PMID: 16471605</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>The journal of physical chemistry. B, 2006-01, Vol.110 (2), p.796-800</ispartof><rights>Copyright © 2006 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/jp055844p$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/jp055844p$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27074,27922,27923,56736,56786</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/16471605$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Huang, Yang</creatorcontrib><creatorcontrib>Yue, Shuanglin</creatorcontrib><creatorcontrib>Wang, Zhongli</creatorcontrib><creatorcontrib>Wang, Qiang</creatorcontrib><creatorcontrib>Shi, Chengying</creatorcontrib><creatorcontrib>Xu, Z</creatorcontrib><creatorcontrib>Bai, X. D</creatorcontrib><creatorcontrib>Tang, Chengcun</creatorcontrib><creatorcontrib>Gu, Changzhi</creatorcontrib><title>Preparation and Electrical Properties of Ultrafine Ga2O3 Nanowires</title><title>The journal of physical chemistry. B</title><addtitle>J. Phys. Chem. B</addtitle><description>Uniform and well-crystallized β-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor−liquid−solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Ω·m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.</description><issn>1520-6106</issn><issn>1520-5207</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLw0AUhQdRbH0s_AOSje6i8550qVWrULVo68LNcDO5gdQ0iTMJ6r830trF4R64HwfOIeSE0QtGObtcNlSpRMpmhwyZ4jTuZXY3XjOqB-QghCWlXPFE75MB09IwTdWQXM88NuChLeoqgiqLbkt0rS8clNHM1w36tsAQ1Xm0KFsPeVFhNAH-LKInqOqvwmM4Ins5lAGPN_eQLO5u5-P7ePo8eRhfTWPgRrQxjEYguFOcSUczDZJLhQJ1lho3SpiDjIpU5SrJBUMjMeVulJtUptIlmLlMHJLzdW7j688OQ2tXRXBYllBh3QWrjVZcJqYHTzdgl64ws40vVuB_7H_rHojXQBFa_N7-wX_0IcIoO5-9Wja5eX1_e3m01z1_tubBBbusO1_1PS2j9m99u11f_AJUSnOe</recordid><startdate>20060119</startdate><enddate>20060119</enddate><creator>Huang, Yang</creator><creator>Yue, Shuanglin</creator><creator>Wang, Zhongli</creator><creator>Wang, Qiang</creator><creator>Shi, Chengying</creator><creator>Xu, Z</creator><creator>Bai, X. D</creator><creator>Tang, Chengcun</creator><creator>Gu, Changzhi</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20060119</creationdate><title>Preparation and Electrical Properties of Ultrafine Ga2O3 Nanowires</title><author>Huang, Yang ; Yue, Shuanglin ; Wang, Zhongli ; Wang, Qiang ; Shi, Chengying ; Xu, Z ; Bai, X. D ; Tang, Chengcun ; Gu, Changzhi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a273t-a99a32c5214c0d6a4245e3e6db7c981cad03b5f58f31e74eb2c9f7b4b4c8edcd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Yang</creatorcontrib><creatorcontrib>Yue, Shuanglin</creatorcontrib><creatorcontrib>Wang, Zhongli</creatorcontrib><creatorcontrib>Wang, Qiang</creatorcontrib><creatorcontrib>Shi, Chengying</creatorcontrib><creatorcontrib>Xu, Z</creatorcontrib><creatorcontrib>Bai, X. D</creatorcontrib><creatorcontrib>Tang, Chengcun</creatorcontrib><creatorcontrib>Gu, Changzhi</creatorcontrib><collection>Istex</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>The journal of physical chemistry. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Yang</au><au>Yue, Shuanglin</au><au>Wang, Zhongli</au><au>Wang, Qiang</au><au>Shi, Chengying</au><au>Xu, Z</au><au>Bai, X. D</au><au>Tang, Chengcun</au><au>Gu, Changzhi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Preparation and Electrical Properties of Ultrafine Ga2O3 Nanowires</atitle><jtitle>The journal of physical chemistry. B</jtitle><addtitle>J. Phys. Chem. B</addtitle><date>2006-01-19</date><risdate>2006</risdate><volume>110</volume><issue>2</issue><spage>796</spage><epage>800</epage><pages>796-800</pages><issn>1520-6106</issn><eissn>1520-5207</eissn><abstract>Uniform and well-crystallized β-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor−liquid−solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Ω·m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>16471605</pmid><doi>10.1021/jp055844p</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1520-6106
ispartof The journal of physical chemistry. B, 2006-01, Vol.110 (2), p.796-800
issn 1520-6106
1520-5207
language eng
recordid cdi_proquest_miscellaneous_67652487
source ACS Publications
title Preparation and Electrical Properties of Ultrafine Ga2O3 Nanowires
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T01%3A39%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Preparation%20and%20Electrical%20Properties%20of%20Ultrafine%20Ga2O3%20Nanowires&rft.jtitle=The%20journal%20of%20physical%20chemistry.%20B&rft.au=Huang,%20Yang&rft.date=2006-01-19&rft.volume=110&rft.issue=2&rft.spage=796&rft.epage=800&rft.pages=796-800&rft.issn=1520-6106&rft.eissn=1520-5207&rft_id=info:doi/10.1021/jp055844p&rft_dat=%3Cproquest_pubme%3E67652487%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=67652487&rft_id=info:pmid/16471605&rfr_iscdi=true