In situ reflectance and optical constants of ion-beam-sputtered SiC films in the 58.4 to 149.2 nm region
The reflectance of freshly deposited SiC thin films is measured in situ for what we believe is the first time. SiC was deposited by means of ion-beam sputtering. Reflectance was measured as a function of the incidence angle in the far and extreme ultraviolet wavelengths from 58.4 to 149.2 nm. In sit...
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| Veröffentlicht in: | Applied Optics 2009-08, Vol.48 (24), p.4698-4702 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
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