Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

We present X-ray photoelectron spectroscopy, van der Pauw Hall mobilities, low-temperature far-infrared magneto transmission (FIR-MT), and atomic force microscopy (AFM) results from graphene films produced by radiative heating in an ultrahigh vacuum (UHV) chamber or produced by radio frequency (RF)...

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Veröffentlicht in:	Nano letters 2009-07, Vol.9 (7), p.2605-2609
Hauptverfasser:	Jernigan, Glenn G, VanMil, Brenda L, Tedesco, Joseph L, Tischler, Joseph G, Glaser, Evan R, Davidson, Anthony, Campbell, Paul M, Gaskill, D. Kurt
Format:	Artikel
Sprache:	eng
Schlagworte:	Carbon - chemistry Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Fullerenes and related materials diamonds, graphite Graphite - chemical synthesis Graphite - chemistry Graphite - classification Hot Temperature Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Microscopy, Atomic Force - methods Physics Radio Waves Silicon - chemistry Specific materials Spectrum Analysis - methods Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Vacuum
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