Phase-Change Ge−Sb Nanowires: Synthesis, Memory Switching, and Phase-Instability
We report the synthesis and characterization of phase-change Ge−Sb nanowires with two different eutectic compositions and their memory switching characteristics. Under application of electric-fields with controlled pulse amplitude and duration times, Sb-rich (Sb ≥ 86 at. %) eutectic Ge−Sb nanowires...
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| Veröffentlicht in: | Nano letters 2009-05, Vol.9 (5), p.2103-2108 |
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| creator | Jung, Yeonwoong Yang, Chung-Ying Lee, Se-Ho Agarwal, Ritesh |
| description | We report the synthesis and characterization of phase-change Ge−Sb nanowires with two different eutectic compositions and their memory switching characteristics. Under application of electric-fields with controlled pulse amplitude and duration times, Sb-rich (Sb ≥ 86 at. %) eutectic Ge−Sb nanowires show phase-change based memory switching, while another eutectic GeSb (Ge:Sb = 1:1) nanowires do not show electronic memory switching at all. However, under repeated measurements, Sb-rich Ge−Sb nanowires display an increase of resistance of the low resistive state. The observed electrical irreversibility for Sb-rich Ge−Sb nanowires is attributed to the structural and compositional instability due to the phase-separation of Ge out of homogeneous Ge−Sb as observed from rapid thermal annealing and transmission electron microscopy experiments. Implications for design of Te-free nanoscale materials for phase change memory applications are also discussed. |
| doi_str_mv | 10.1021/nl900620n |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_67243795</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>67243795</sourcerecordid><originalsourceid>FETCH-LOGICAL-a343t-16ff3714d670fd11b7b10c07ed40d5994806ca11edac1df95727507b13c8e7873</originalsourceid><addsrcrecordid>eNpt0E9LwzAYx_EgitPpwTcgvSgIqz5P0zaLNxk6B_MPTs8lTdM1o0tn0jL2Djz7En0lVja2i6fk8OH3wJeQM4RrhABvTMkB4gDMHjnCiIIfcx7sb__9sEOOnZsBAKcRHJIOcsoxhvCIvL0Wwil_UAgzVd5Q_Xx9T1LvWZhqqa1yt95kZepCOe163pOaV3blTZa6loU2054nTOatB0bG1SLVpa5XJ-QgF6VTp5u3Sz4e7t8Hj_74ZTga3I19QUNa-xjnOWUYZjGDPENMWYoggakshCziPOxDLAWiyoTELOcRC1gELaKyr1if0S65XO8ubPXZKFcnc-2kKkthVNW4JGZBSBmPWni1htJWzlmVJwur58KuEoTkL2CyDdja881ok85VtpObYi242ADhpChzK4zUbusCDHnEEXZOSJfMqsaatsU_B38Bm4eDtg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>67243795</pqid></control><display><type>article</type><title>Phase-Change Ge−Sb Nanowires: Synthesis, Memory Switching, and Phase-Instability</title><source>ACS Publications</source><creator>Jung, Yeonwoong ; Yang, Chung-Ying ; Lee, Se-Ho ; Agarwal, Ritesh</creator><creatorcontrib>Jung, Yeonwoong ; Yang, Chung-Ying ; Lee, Se-Ho ; Agarwal, Ritesh</creatorcontrib><description>We report the synthesis and characterization of phase-change Ge−Sb nanowires with two different eutectic compositions and their memory switching characteristics. Under application of electric-fields with controlled pulse amplitude and duration times, Sb-rich (Sb ≥ 86 at. %) eutectic Ge−Sb nanowires show phase-change based memory switching, while another eutectic GeSb (Ge:Sb = 1:1) nanowires do not show electronic memory switching at all. However, under repeated measurements, Sb-rich Ge−Sb nanowires display an increase of resistance of the low resistive state. The observed electrical irreversibility for Sb-rich Ge−Sb nanowires is attributed to the structural and compositional instability due to the phase-separation of Ge out of homogeneous Ge−Sb as observed from rapid thermal annealing and transmission electron microscopy experiments. Implications for design of Te-free nanoscale materials for phase change memory applications are also discussed.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl900620n</identifier><identifier>PMID: 19391604</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Materials science ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Physics ; Quantum wires ; Specific phase transitions ; Structural transitions in nanoscale materials ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Nano letters, 2009-05, Vol.9 (5), p.2103-2108</ispartof><rights>Copyright © 2009 American Chemical Society</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a343t-16ff3714d670fd11b7b10c07ed40d5994806ca11edac1df95727507b13c8e7873</citedby><cites>FETCH-LOGICAL-a343t-16ff3714d670fd11b7b10c07ed40d5994806ca11edac1df95727507b13c8e7873</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl900620n$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl900620n$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>315,782,786,2767,27083,27931,27932,56745,56795</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21495910$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/19391604$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Jung, Yeonwoong</creatorcontrib><creatorcontrib>Yang, Chung-Ying</creatorcontrib><creatorcontrib>Lee, Se-Ho</creatorcontrib><creatorcontrib>Agarwal, Ritesh</creatorcontrib><title>Phase-Change Ge−Sb Nanowires: Synthesis, Memory Switching, and Phase-Instability</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>We report the synthesis and characterization of phase-change Ge−Sb nanowires with two different eutectic compositions and their memory switching characteristics. Under application of electric-fields with controlled pulse amplitude and duration times, Sb-rich (Sb ≥ 86 at. %) eutectic Ge−Sb nanowires show phase-change based memory switching, while another eutectic GeSb (Ge:Sb = 1:1) nanowires do not show electronic memory switching at all. However, under repeated measurements, Sb-rich Ge−Sb nanowires display an increase of resistance of the low resistive state. The observed electrical irreversibility for Sb-rich Ge−Sb nanowires is attributed to the structural and compositional instability due to the phase-separation of Ge out of homogeneous Ge−Sb as observed from rapid thermal annealing and transmission electron microscopy experiments. Implications for design of Te-free nanoscale materials for phase change memory applications are also discussed.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</subject><subject>Materials science</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Specific phase transitions</subject><subject>Structural transitions in nanoscale materials</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNpt0E9LwzAYx_EgitPpwTcgvSgIqz5P0zaLNxk6B_MPTs8lTdM1o0tn0jL2Djz7En0lVja2i6fk8OH3wJeQM4RrhABvTMkB4gDMHjnCiIIfcx7sb__9sEOOnZsBAKcRHJIOcsoxhvCIvL0Wwil_UAgzVd5Q_Xx9T1LvWZhqqa1yt95kZepCOe163pOaV3blTZa6loU2054nTOatB0bG1SLVpa5XJ-QgF6VTp5u3Sz4e7t8Hj_74ZTga3I19QUNa-xjnOWUYZjGDPENMWYoggakshCziPOxDLAWiyoTELOcRC1gELaKyr1if0S65XO8ubPXZKFcnc-2kKkthVNW4JGZBSBmPWni1htJWzlmVJwur58KuEoTkL2CyDdja881ok85VtpObYi242ADhpChzK4zUbusCDHnEEXZOSJfMqsaatsU_B38Bm4eDtg</recordid><startdate>20090513</startdate><enddate>20090513</enddate><creator>Jung, Yeonwoong</creator><creator>Yang, Chung-Ying</creator><creator>Lee, Se-Ho</creator><creator>Agarwal, Ritesh</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20090513</creationdate><title>Phase-Change Ge−Sb Nanowires: Synthesis, Memory Switching, and Phase-Instability</title><author>Jung, Yeonwoong ; Yang, Chung-Ying ; Lee, Se-Ho ; Agarwal, Ritesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a343t-16ff3714d670fd11b7b10c07ed40d5994806ca11edac1df95727507b13c8e7873</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Materials science</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Specific phase transitions</topic><topic>Structural transitions in nanoscale materials</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jung, Yeonwoong</creatorcontrib><creatorcontrib>Yang, Chung-Ying</creatorcontrib><creatorcontrib>Lee, Se-Ho</creatorcontrib><creatorcontrib>Agarwal, Ritesh</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jung, Yeonwoong</au><au>Yang, Chung-Ying</au><au>Lee, Se-Ho</au><au>Agarwal, Ritesh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phase-Change Ge−Sb Nanowires: Synthesis, Memory Switching, and Phase-Instability</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2009-05-13</date><risdate>2009</risdate><volume>9</volume><issue>5</issue><spage>2103</spage><epage>2108</epage><pages>2103-2108</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We report the synthesis and characterization of phase-change Ge−Sb nanowires with two different eutectic compositions and their memory switching characteristics. Under application of electric-fields with controlled pulse amplitude and duration times, Sb-rich (Sb ≥ 86 at. %) eutectic Ge−Sb nanowires show phase-change based memory switching, while another eutectic GeSb (Ge:Sb = 1:1) nanowires do not show electronic memory switching at all. However, under repeated measurements, Sb-rich Ge−Sb nanowires display an increase of resistance of the low resistive state. The observed electrical irreversibility for Sb-rich Ge−Sb nanowires is attributed to the structural and compositional instability due to the phase-separation of Ge out of homogeneous Ge−Sb as observed from rapid thermal annealing and transmission electron microscopy experiments. Implications for design of Te-free nanoscale materials for phase change memory applications are also discussed.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>19391604</pmid><doi>10.1021/nl900620n</doi><tpages>6</tpages></addata></record> |
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| subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Physics Quantum wires Specific phase transitions Structural transitions in nanoscale materials Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Phase-Change Ge−Sb Nanowires: Synthesis, Memory Switching, and Phase-Instability |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-04T12%3A13%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Phase-Change%20Ge%E2%88%92Sb%20Nanowires:%20Synthesis,%20Memory%20Switching,%20and%20Phase-Instability&rft.jtitle=Nano%20letters&rft.au=Jung,%20Yeonwoong&rft.date=2009-05-13&rft.volume=9&rft.issue=5&rft.spage=2103&rft.epage=2108&rft.pages=2103-2108&rft.issn=1530-6984&rft.eissn=1530-6992&rft_id=info:doi/10.1021/nl900620n&rft_dat=%3Cproquest_cross%3E67243795%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=67243795&rft_id=info:pmid/19391604&rfr_iscdi=true |