Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys
We show that a quantitative description of the conduction band in Ga(In)NAs is obtained by combining the experimentally motivated band anticrossing model with detailed calculations of nitrogen cluster states. The unexpectedly large electron effective mass values observed in many GaNAs samples are du...
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| Veröffentlicht in: | Physical review letters 2004-11, Vol.93 (19), p.196402.1-196402.4, Article 196402 |
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| container_end_page | 196402.4 |
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| container_issue | 19 |
| container_start_page | 196402.1 |
| container_title | Physical review letters |
| container_volume | 93 |
| creator | LINDSAY, A O'REILLY, E. P |
| description | We show that a quantitative description of the conduction band in Ga(In)NAs is obtained by combining the experimentally motivated band anticrossing model with detailed calculations of nitrogen cluster states. The unexpectedly large electron effective mass values observed in many GaNAs samples are due to hybridization between the conduction band edge E- and nitrogen cluster states close to the band edge. Similar effects explain the difficulty in observing the higher-lying E+ level at low N composition. We predict a decrease of effective mass with hydrostatic pressure in many GaNAs samples. |
| doi_str_mv | 10.1103/physrevlett.93.196402 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_67179032</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>67179032</sourcerecordid><originalsourceid>FETCH-LOGICAL-c450t-20048134c12ade257bd7404ed0470742a6d5944839963601d8d4313ba2e2dcf73</originalsourceid><addsrcrecordid>eNpFkMGKFDEQhoMo7uzqIyh90VuPVUm60znKsurCgCLuuckk1W4knYxJemHe3h5nYE8FP99fRX2MvUPYIoL4dHg8lkxPgWrdarFF3UvgL9gGQelWIcqXbAMgsNUA6opdl_IHAJD3w2t2hV0PMHTDhrmH6CdvTfUpNmlq6iM1exNdY2L1NqdSfPzdnAIbllIpt6WaSs2cHIVyajgfljWIvmbvqCk0e5uiW2xNuTEhpGN5w15NJhR6e5k37OHL3a_bb-3u-9f728-71soOassB5IBCWuTGEe_U3ikJkhxIBUpy07tOSzkIrXvRA7rBSYFibzhxZyclbtjH895DTn8XKnWcfbEUgomUljL2CpUGwVewO4P_P8w0jYfsZ5OPI8J40jv-WPX-pKfdqnfUYjzrXXvvLweW_UzuuXXxuQIfLoAp1oQpm2h9eeZ6ARolF_8AANeHPA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>67179032</pqid></control><display><type>article</type><title>Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys</title><source>American Physical Society Journals</source><creator>LINDSAY, A ; O'REILLY, E. P</creator><creatorcontrib>LINDSAY, A ; O'REILLY, E. P</creatorcontrib><description>We show that a quantitative description of the conduction band in Ga(In)NAs is obtained by combining the experimentally motivated band anticrossing model with detailed calculations of nitrogen cluster states. The unexpectedly large electron effective mass values observed in many GaNAs samples are due to hybridization between the conduction band edge E- and nitrogen cluster states close to the band edge. Similar effects explain the difficulty in observing the higher-lying E+ level at low N composition. We predict a decrease of effective mass with hydrostatic pressure in many GaNAs samples.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/physrevlett.93.196402</identifier><identifier>PMID: 15600858</identifier><identifier>CODEN: PRLTAO</identifier><language>eng</language><publisher>Ridge, NY: American Physical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron states ; Exact sciences and technology ; Iii-v semiconductors ; Impurity and defect levels ; Physics</subject><ispartof>Physical review letters, 2004-11, Vol.93 (19), p.196402.1-196402.4, Article 196402</ispartof><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c450t-20048134c12ade257bd7404ed0470742a6d5944839963601d8d4313ba2e2dcf73</citedby><cites>FETCH-LOGICAL-c450t-20048134c12ade257bd7404ed0470742a6d5944839963601d8d4313ba2e2dcf73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2863,2864,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16309142$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/15600858$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>LINDSAY, A</creatorcontrib><creatorcontrib>O'REILLY, E. P</creatorcontrib><title>Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>We show that a quantitative description of the conduction band in Ga(In)NAs is obtained by combining the experimentally motivated band anticrossing model with detailed calculations of nitrogen cluster states. The unexpectedly large electron effective mass values observed in many GaNAs samples are due to hybridization between the conduction band edge E- and nitrogen cluster states close to the band edge. Similar effects explain the difficulty in observing the higher-lying E+ level at low N composition. We predict a decrease of effective mass with hydrostatic pressure in many GaNAs samples.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron states</subject><subject>Exact sciences and technology</subject><subject>Iii-v semiconductors</subject><subject>Impurity and defect levels</subject><subject>Physics</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNpFkMGKFDEQhoMo7uzqIyh90VuPVUm60znKsurCgCLuuckk1W4knYxJemHe3h5nYE8FP99fRX2MvUPYIoL4dHg8lkxPgWrdarFF3UvgL9gGQelWIcqXbAMgsNUA6opdl_IHAJD3w2t2hV0PMHTDhrmH6CdvTfUpNmlq6iM1exNdY2L1NqdSfPzdnAIbllIpt6WaSs2cHIVyajgfljWIvmbvqCk0e5uiW2xNuTEhpGN5w15NJhR6e5k37OHL3a_bb-3u-9f728-71soOassB5IBCWuTGEe_U3ikJkhxIBUpy07tOSzkIrXvRA7rBSYFibzhxZyclbtjH895DTn8XKnWcfbEUgomUljL2CpUGwVewO4P_P8w0jYfsZ5OPI8J40jv-WPX-pKfdqnfUYjzrXXvvLweW_UzuuXXxuQIfLoAp1oQpm2h9eeZ6ARolF_8AANeHPA</recordid><startdate>20041105</startdate><enddate>20041105</enddate><creator>LINDSAY, A</creator><creator>O'REILLY, E. P</creator><general>American Physical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20041105</creationdate><title>Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys</title><author>LINDSAY, A ; O'REILLY, E. P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c450t-20048134c12ade257bd7404ed0470742a6d5944839963601d8d4313ba2e2dcf73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron states</topic><topic>Exact sciences and technology</topic><topic>Iii-v semiconductors</topic><topic>Impurity and defect levels</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LINDSAY, A</creatorcontrib><creatorcontrib>O'REILLY, E. P</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LINDSAY, A</au><au>O'REILLY, E. P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2004-11-05</date><risdate>2004</risdate><volume>93</volume><issue>19</issue><spage>196402.1</spage><epage>196402.4</epage><pages>196402.1-196402.4</pages><artnum>196402</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><coden>PRLTAO</coden><abstract>We show that a quantitative description of the conduction band in Ga(In)NAs is obtained by combining the experimentally motivated band anticrossing model with detailed calculations of nitrogen cluster states. The unexpectedly large electron effective mass values observed in many GaNAs samples are due to hybridization between the conduction band edge E- and nitrogen cluster states close to the band edge. Similar effects explain the difficulty in observing the higher-lying E+ level at low N composition. We predict a decrease of effective mass with hydrostatic pressure in many GaNAs samples.</abstract><cop>Ridge, NY</cop><pub>American Physical Society</pub><pmid>15600858</pmid><doi>10.1103/physrevlett.93.196402</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Physical review letters, 2004-11, Vol.93 (19), p.196402.1-196402.4, Article 196402 |
| issn | 0031-9007 1079-7114 |
| language | eng |
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| source | American Physical Society Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Iii-v semiconductors Impurity and defect levels Physics |
| title | Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T07%3A47%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Unification%20of%20the%20band%20anticrossing%20and%20cluster-state%20models%20of%20dilute%20nitride%20semiconductor%20alloys&rft.jtitle=Physical%20review%20letters&rft.au=LINDSAY,%20A&rft.date=2004-11-05&rft.volume=93&rft.issue=19&rft.spage=196402.1&rft.epage=196402.4&rft.pages=196402.1-196402.4&rft.artnum=196402&rft.issn=0031-9007&rft.eissn=1079-7114&rft.coden=PRLTAO&rft_id=info:doi/10.1103/physrevlett.93.196402&rft_dat=%3Cproquest_cross%3E67179032%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=67179032&rft_id=info:pmid/15600858&rfr_iscdi=true |