Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO2 gate oxide, the devices were evaluated in terms of their elect...

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Veröffentlicht in:	ACS nano 2009-03, Vol.3 (3), p.700-706
Hauptverfasser:	Liao, L, Fan, H. J, Yan, B, Zhang, Z, Chen, L. L, Li, B. S, Xing, G. Z, Shen, Z. X, Wu, T, Sun, X. W, Wang, J, Yu, T
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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