Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications

We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO2 gate oxide, the devices were evaluated in terms of their elect...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS nano 2009-03, Vol.3 (3), p.700-706
Hauptverfasser: Liao, L, Fan, H. J, Yan, B, Zhang, Z, Chen, L. L, Li, B. S, Xing, G. Z, Shen, Z. X, Wu, T, Sun, X. W, Wang, J, Yu, T
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 706
container_issue 3
container_start_page 700
container_title ACS nano
container_volume 3
creator Liao, L
Fan, H. J
Yan, B
Zhang, Z
Chen, L. L
Li, B. S
Xing, G. Z
Shen, Z. X
Wu, T
Sun, X. W
Wang, J
Yu, T
description We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I−V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 103) on/off ratio at zero gate voltage. Our results give a proof-of-principle demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).
doi_str_mv 10.1021/nn800808s
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_67059249</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>67059249</sourcerecordid><originalsourceid>FETCH-LOGICAL-a313t-2220a0a608a19f94af6a239579b86f1b3213e4f3e2cb5c1a4f8562cb7dbfc82e3</originalsourceid><addsrcrecordid>eNptkE9LwzAchoMobv45-AUkFwUP1fxp09TbGE6FOS8TvZU0S1hGmtSkdezb27ExL55-Lz8eXngfAK4wuseI4AfnOEIc8XgEhrigLEGcfR0fcoYH4CzGFUJZznN2Cga4IGnB02wIPicqBK-skm0wEs6DcNHE1ocI16Zdwplwfm2CguOlcE7ZRzj3axEWcObdj7eiNVbBN1X7sIGjprFG9i_v4gU40cJGdbm_5-Bj8jQfvyTT9-fX8WiaCIppmxBCkECCIS5woYtUaCYILbK8qDjTuKIEU5VqqoisMolFqnnG-pwvKi05UfQc3O56m-C_OxXbsjZRKmuFU76LJctRth3bg3c7UAYfY1C6bIKpRdiUGJVbi-XBYs9e70u7qlaLP3KvrQdudoCQsVz5Lrh-4z9Fvy54eoA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>67059249</pqid></control><display><type>article</type><title>Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications</title><source>American Chemical Society Journals</source><creator>Liao, L ; Fan, H. J ; Yan, B ; Zhang, Z ; Chen, L. L ; Li, B. S ; Xing, G. Z ; Shen, Z. X ; Wu, T ; Sun, X. W ; Wang, J ; Yu, T</creator><creatorcontrib>Liao, L ; Fan, H. J ; Yan, B ; Zhang, Z ; Chen, L. L ; Li, B. S ; Xing, G. Z ; Shen, Z. X ; Wu, T ; Sun, X. W ; Wang, J ; Yu, T</creatorcontrib><description>We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I−V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 103) on/off ratio at zero gate voltage. Our results give a proof-of-principle demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/nn800808s</identifier><identifier>PMID: 19249845</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>ACS nano, 2009-03, Vol.3 (3), p.700-706</ispartof><rights>Copyright © 2009 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a313t-2220a0a608a19f94af6a239579b86f1b3213e4f3e2cb5c1a4f8562cb7dbfc82e3</citedby><cites>FETCH-LOGICAL-a313t-2220a0a608a19f94af6a239579b86f1b3213e4f3e2cb5c1a4f8562cb7dbfc82e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nn800808s$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nn800808s$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/19249845$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Liao, L</creatorcontrib><creatorcontrib>Fan, H. J</creatorcontrib><creatorcontrib>Yan, B</creatorcontrib><creatorcontrib>Zhang, Z</creatorcontrib><creatorcontrib>Chen, L. L</creatorcontrib><creatorcontrib>Li, B. S</creatorcontrib><creatorcontrib>Xing, G. Z</creatorcontrib><creatorcontrib>Shen, Z. X</creatorcontrib><creatorcontrib>Wu, T</creatorcontrib><creatorcontrib>Sun, X. W</creatorcontrib><creatorcontrib>Wang, J</creatorcontrib><creatorcontrib>Yu, T</creatorcontrib><title>Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I−V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 103) on/off ratio at zero gate voltage. Our results give a proof-of-principle demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).</description><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNptkE9LwzAchoMobv45-AUkFwUP1fxp09TbGE6FOS8TvZU0S1hGmtSkdezb27ExL55-Lz8eXngfAK4wuseI4AfnOEIc8XgEhrigLEGcfR0fcoYH4CzGFUJZznN2Cga4IGnB02wIPicqBK-skm0wEs6DcNHE1ocI16Zdwplwfm2CguOlcE7ZRzj3axEWcObdj7eiNVbBN1X7sIGjprFG9i_v4gU40cJGdbm_5-Bj8jQfvyTT9-fX8WiaCIppmxBCkECCIS5woYtUaCYILbK8qDjTuKIEU5VqqoisMolFqnnG-pwvKi05UfQc3O56m-C_OxXbsjZRKmuFU76LJctRth3bg3c7UAYfY1C6bIKpRdiUGJVbi-XBYs9e70u7qlaLP3KvrQdudoCQsVz5Lrh-4z9Fvy54eoA</recordid><startdate>20090324</startdate><enddate>20090324</enddate><creator>Liao, L</creator><creator>Fan, H. J</creator><creator>Yan, B</creator><creator>Zhang, Z</creator><creator>Chen, L. L</creator><creator>Li, B. S</creator><creator>Xing, G. Z</creator><creator>Shen, Z. X</creator><creator>Wu, T</creator><creator>Sun, X. W</creator><creator>Wang, J</creator><creator>Yu, T</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20090324</creationdate><title>Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications</title><author>Liao, L ; Fan, H. J ; Yan, B ; Zhang, Z ; Chen, L. L ; Li, B. S ; Xing, G. Z ; Shen, Z. X ; Wu, T ; Sun, X. W ; Wang, J ; Yu, T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a313t-2220a0a608a19f94af6a239579b86f1b3213e4f3e2cb5c1a4f8562cb7dbfc82e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liao, L</creatorcontrib><creatorcontrib>Fan, H. J</creatorcontrib><creatorcontrib>Yan, B</creatorcontrib><creatorcontrib>Zhang, Z</creatorcontrib><creatorcontrib>Chen, L. L</creatorcontrib><creatorcontrib>Li, B. S</creatorcontrib><creatorcontrib>Xing, G. Z</creatorcontrib><creatorcontrib>Shen, Z. X</creatorcontrib><creatorcontrib>Wu, T</creatorcontrib><creatorcontrib>Sun, X. W</creatorcontrib><creatorcontrib>Wang, J</creatorcontrib><creatorcontrib>Yu, T</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liao, L</au><au>Fan, H. J</au><au>Yan, B</au><au>Zhang, Z</au><au>Chen, L. L</au><au>Li, B. S</au><au>Xing, G. Z</au><au>Shen, Z. X</au><au>Wu, T</au><au>Sun, X. W</au><au>Wang, J</au><au>Yu, T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2009-03-24</date><risdate>2009</risdate><volume>3</volume><issue>3</issue><spage>700</spage><epage>706</epage><pages>700-706</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr0.3Ti0.7)O3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I−V g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 103) on/off ratio at zero gate voltage. Our results give a proof-of-principle demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>19249845</pmid><doi>10.1021/nn800808s</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1936-0851
ispartof ACS nano, 2009-03, Vol.3 (3), p.700-706
issn 1936-0851
1936-086X
language eng
recordid cdi_proquest_miscellaneous_67059249
source American Chemical Society Journals
title Ferroelectric Transistors with Nanowire Channel: Toward Nonvolatile Memory Applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T04%3A32%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ferroelectric%20Transistors%20with%20Nanowire%20Channel:%20Toward%20Nonvolatile%20Memory%20Applications&rft.jtitle=ACS%20nano&rft.au=Liao,%20L&rft.date=2009-03-24&rft.volume=3&rft.issue=3&rft.spage=700&rft.epage=706&rft.pages=700-706&rft.issn=1936-0851&rft.eissn=1936-086X&rft_id=info:doi/10.1021/nn800808s&rft_dat=%3Cproquest_cross%3E67059249%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=67059249&rft_id=info:pmid/19249845&rfr_iscdi=true