Epitaxial growth of InP nanowires on germanium
The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of I...
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| Veröffentlicht in: | Nature materials 2004-11, Vol.3 (11), p.769-773 |
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| creator | Bakkers, Erik P. A. M van Dam, Jorden A De Franceschi, Silvano Kouwenhoven, Leo P Kaiser, Monja Verheijen, Marcel Wondergem, Harry van der Sluis, Paul |
| description | The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V nanowires on a group IV substrate. We have grown InP nanowires on germanium substrates by a vapour-liquid-solid method. Although the crystal lattice mismatch is large (3.7%), the as-grown wires are monocrystalline and virtually free of dislocations. X-ray diffraction unambiguously demonstrates the heteroepitaxial growth of the nanowires. In addition, we show that a low-resistance electrical contact can be obtained between the wires and the substrate. |
| doi_str_mv | 10.1038/nmat1235 |
| format | Article |
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A. M ; van Dam, Jorden A ; De Franceschi, Silvano ; Kouwenhoven, Leo P ; Kaiser, Monja ; Verheijen, Marcel ; Wondergem, Harry ; van der Sluis, Paul</creator><creatorcontrib>Bakkers, Erik P. A. M ; van Dam, Jorden A ; De Franceschi, Silvano ; Kouwenhoven, Leo P ; Kaiser, Monja ; Verheijen, Marcel ; Wondergem, Harry ; van der Sluis, Paul</creatorcontrib><description>The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V nanowires on a group IV substrate. We have grown InP nanowires on germanium substrates by a vapour-liquid-solid method. Although the crystal lattice mismatch is large (3.7%), the as-grown wires are monocrystalline and virtually free of dislocations. X-ray diffraction unambiguously demonstrates the heteroepitaxial growth of the nanowires. In addition, we show that a low-resistance electrical contact can be obtained between the wires and the substrate.</description><identifier>ISSN: 1476-1122</identifier><identifier>EISSN: 1476-4660</identifier><identifier>DOI: 10.1038/nmat1235</identifier><identifier>PMID: 15475961</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>Biomaterials ; Chemistry and Materials Science ; Condensed Matter Physics ; Germanium ; Germanium - chemistry ; Indium - chemistry ; letter ; Materials Science ; Microscopy, Electron, Scanning ; Microscopy, Electron, Transmission ; Nanotechnology ; Nanowires ; Optical and Electronic Materials ; Phosphines - chemistry ; Scanning electron microscopy ; Silicon ; Substrates ; Thermal expansion ; Wire ; X-Ray Diffraction</subject><ispartof>Nature materials, 2004-11, Vol.3 (11), p.769-773</ispartof><rights>Springer Nature Limited 2004</rights><rights>Copyright Nature Publishing Group Nov 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c462t-9221c9ec2389332ccaf4c7fe041df24b40f29e88faedb1ad83b3dc4b5e2fda603</citedby><cites>FETCH-LOGICAL-c462t-9221c9ec2389332ccaf4c7fe041df24b40f29e88faedb1ad83b3dc4b5e2fda603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1038/nmat1235$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1038/nmat1235$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,2727,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/15475961$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Bakkers, Erik P. 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| subjects | Biomaterials Chemistry and Materials Science Condensed Matter Physics Germanium Germanium - chemistry Indium - chemistry letter Materials Science Microscopy, Electron, Scanning Microscopy, Electron, Transmission Nanotechnology Nanowires Optical and Electronic Materials Phosphines - chemistry Scanning electron microscopy Silicon Substrates Thermal expansion Wire X-Ray Diffraction |
| title | Epitaxial growth of InP nanowires on germanium |
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