On the structured imperfections of bulk GaSb using high resolution transmission electron microscopy

GaSb is a promising III–V direct band gap semiconductor with sphalerite type FCC structure. Its band gap value has made it an excellent candidate for the conversion of infrared radiation to electricity. The wafers of GaSb, that were studied, originated from ingots grown with the Liquid Encapsulated...

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Veröffentlicht in:	Micron (Oxford, England : 1993) England : 1993), 2009, Vol.40 (1), p.6-10
Hauptverfasser:	Lioutas, Ch. B., Zoulis, G., Konidaris, S., Polychroniadis, E.K., Stróż, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystallization Deviation of stoichiometry Gallium - chemistry GaSb High resolution electron microscopy Microscopy, Electron, Transmission - methods Modulated structure Molecular Structure
Online-Zugang:	Volltext
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