Critical role of surface steps in the alloying of Ge on Si(001)

Using low-energy electron microscopy, we show that intermixing of Ge on Si(001) during growth is enhanced on stepped surfaces and is hindered on terraces where step flow does not occur. On large terraces we have identified a dramatic and unanticipated structural rearrangement that facilitates interm...

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Veröffentlicht in:	Physical review letters 2004-05, Vol.92 (21), p.216104-216104, Article 216104
Hauptverfasser:	Hannon, J B, Copel, M, Stumpf, R, Reuter, M C, Tromp, R M
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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