Critical role of surface steps in the alloying of Ge on Si(001)

Critical role of surface steps in the alloying of Ge on Si(001)

Using low-energy electron microscopy, we show that intermixing of Ge on Si(001) during growth is enhanced on stepped surfaces and is hindered on terraces where step flow does not occur. On large terraces we have identified a dramatic and unanticipated structural rearrangement that facilitates interm...

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Veröffentlicht in:Physical review letters 2004-05, Vol.92 (21), p.216104-216104, Article 216104
Hauptverfasser: Hannon, J B, Copel, M, Stumpf, R, Reuter, M C, Tromp, R M
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container_end_page 216104
container_issue 21
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container_title Physical review letters
container_volume 92
creator Hannon, J B
Copel, M
Stumpf, R
Reuter, M C
Tromp, R M
description Using low-energy electron microscopy, we show that intermixing of Ge on Si(001) during growth is enhanced on stepped surfaces and is hindered on terraces where step flow does not occur. On large terraces we have identified a dramatic and unanticipated structural rearrangement that facilitates intermixing: Pairs of steps spontaneously form and migrate over the surface, leaving alloyed regions in their wake. The driving force for step formation is the entropy gain associated with the enhanced intermixing of Ge.
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title Critical role of surface steps in the alloying of Ge on Si(001)
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