Correlation between Resistance and Field Emission Performance of Individual ZnO One-Dimensional Nanostructures
Both electrical and field emission measurements were carried out to study the correlation between resistance and field emission performance of individual one-dimensional (1D) ZnO nanostructures. Three types of 1D ZnO nanostructures were investigated (i.e., agave-like shape, pencil-like shape, and hi...
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| Veröffentlicht in: | ACS nano 2008-10, Vol.2 (10), p.2015-2022 |
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| container_issue | 10 |
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| container_title | ACS nano |
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| creator | She, Juncong Xiao, Zhiming Yang, Yuhua Deng, Shaozhi Chen, Jun Yang, Guowei Xu, Ningsheng |
| description | Both electrical and field emission measurements were carried out to study the correlation between resistance and field emission performance of individual one-dimensional (1D) ZnO nanostructures. Three types of 1D ZnO nanostructures were investigated (i.e., agave-like shape, pencil-like shape, and hierarchical structure) and were prepared by thermal chemical vapor transport and condensation without using any catalyst. The 1D ZnO nanostructures have obvious differences in resistance and thus conductivity from type to type. In addition, in the same type of 1D ZnO nanostructure, each individual emitter may also have variation in resistance and thus in conductivity. The field emission performance of the ZnO emitters was found to be strongly correlated with the resistance of each individual ZnO nanostructure: (i) a ZnO emitter with low resistance will have better emission; (ii) a high resistance region in a ZnO nanostructure is liable to the initiation of a vacuum breakdown event. The results indicate that, besides the uniformity in the geometrical structure, the uniformity in conductivity of the emitters in an array should be ensured, in order to meet the requirement of device application. |
| doi_str_mv | 10.1021/nn800283u |
| format | Article |
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Three types of 1D ZnO nanostructures were investigated (i.e., agave-like shape, pencil-like shape, and hierarchical structure) and were prepared by thermal chemical vapor transport and condensation without using any catalyst. The 1D ZnO nanostructures have obvious differences in resistance and thus conductivity from type to type. In addition, in the same type of 1D ZnO nanostructure, each individual emitter may also have variation in resistance and thus in conductivity. The field emission performance of the ZnO emitters was found to be strongly correlated with the resistance of each individual ZnO nanostructure: (i) a ZnO emitter with low resistance will have better emission; (ii) a high resistance region in a ZnO nanostructure is liable to the initiation of a vacuum breakdown event. The results indicate that, besides the uniformity in the geometrical structure, the uniformity in conductivity of the emitters in an array should be ensured, in order to meet the requirement of device application.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/nn800283u</identifier><identifier>PMID: 19206446</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Crystallization - methods ; Electric Impedance ; Electrochemistry - methods ; Electromagnetic Fields ; Macromolecular Substances - chemistry ; Materials Testing ; Molecular Conformation ; Nanostructures - chemistry ; Nanostructures - ultrastructure ; Nanotechnology - methods ; Particle Size ; Surface Properties ; Zinc Oxide - chemistry</subject><ispartof>ACS nano, 2008-10, Vol.2 (10), p.2015-2022</ispartof><rights>Copyright © 2008 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a379t-59116c0071c705f3f4524d19aa9b766225e854c3694df7c7c4d9be81d200bd103</citedby><cites>FETCH-LOGICAL-a379t-59116c0071c705f3f4524d19aa9b766225e854c3694df7c7c4d9be81d200bd103</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nn800283u$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nn800283u$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/19206446$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>She, Juncong</creatorcontrib><creatorcontrib>Xiao, Zhiming</creatorcontrib><creatorcontrib>Yang, Yuhua</creatorcontrib><creatorcontrib>Deng, Shaozhi</creatorcontrib><creatorcontrib>Chen, Jun</creatorcontrib><creatorcontrib>Yang, Guowei</creatorcontrib><creatorcontrib>Xu, Ningsheng</creatorcontrib><title>Correlation between Resistance and Field Emission Performance of Individual ZnO One-Dimensional Nanostructures</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>Both electrical and field emission measurements were carried out to study the correlation between resistance and field emission performance of individual one-dimensional (1D) ZnO nanostructures. Three types of 1D ZnO nanostructures were investigated (i.e., agave-like shape, pencil-like shape, and hierarchical structure) and were prepared by thermal chemical vapor transport and condensation without using any catalyst. The 1D ZnO nanostructures have obvious differences in resistance and thus conductivity from type to type. In addition, in the same type of 1D ZnO nanostructure, each individual emitter may also have variation in resistance and thus in conductivity. The field emission performance of the ZnO emitters was found to be strongly correlated with the resistance of each individual ZnO nanostructure: (i) a ZnO emitter with low resistance will have better emission; (ii) a high resistance region in a ZnO nanostructure is liable to the initiation of a vacuum breakdown event. The results indicate that, besides the uniformity in the geometrical structure, the uniformity in conductivity of the emitters in an array should be ensured, in order to meet the requirement of device application.</description><subject>Crystallization - methods</subject><subject>Electric Impedance</subject><subject>Electrochemistry - methods</subject><subject>Electromagnetic Fields</subject><subject>Macromolecular Substances - chemistry</subject><subject>Materials Testing</subject><subject>Molecular Conformation</subject><subject>Nanostructures - chemistry</subject><subject>Nanostructures - ultrastructure</subject><subject>Nanotechnology - methods</subject><subject>Particle Size</subject><subject>Surface Properties</subject><subject>Zinc Oxide - chemistry</subject><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpt0E9LwzAYBvAgitPpwS8guSh4qOZPmzRHmZsOxIkoiJeSJm-ho01m0ip-ezs39OIpL3l_PLw8CJ1QckkJo1fO5YSwnPc76IAqLhKSi9fd3zmjI3QY45KQTOZS7KMRVYyINBUHyE18CNDorvYOl9B9Ajj8BLGOnXYGsHYWz2poLJ62dYxr9Qih8qH9WfsKz52tP2rb6wa_uQVeOEhu6hbc2g5_D9r52IXedH2AeIT2Kt1EON6-Y_Qymz5P7pL7xe18cn2faC5Vl2SKUmEIkdRIklW8SjOWWqq0VqUUgrEM8iw1XKjUVtJIk1pVQk4tI6S0lPAxOt_kroJ_7yF2xXC9gabRDnwfCyFEzglnA7zYQBN8jAGqYhXqVoevgpJiXW7xW-5gT7ehfdmC_ZPbNgdwtgHaxGLp-zAUEP8J-gY4ZoGt</recordid><startdate>20081028</startdate><enddate>20081028</enddate><creator>She, Juncong</creator><creator>Xiao, Zhiming</creator><creator>Yang, Yuhua</creator><creator>Deng, Shaozhi</creator><creator>Chen, Jun</creator><creator>Yang, Guowei</creator><creator>Xu, Ningsheng</creator><general>American Chemical Society</general><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20081028</creationdate><title>Correlation between Resistance and Field Emission Performance of Individual ZnO One-Dimensional Nanostructures</title><author>She, Juncong ; Xiao, Zhiming ; Yang, Yuhua ; Deng, Shaozhi ; Chen, Jun ; Yang, Guowei ; Xu, Ningsheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a379t-59116c0071c705f3f4524d19aa9b766225e854c3694df7c7c4d9be81d200bd103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Crystallization - methods</topic><topic>Electric Impedance</topic><topic>Electrochemistry - methods</topic><topic>Electromagnetic Fields</topic><topic>Macromolecular Substances - chemistry</topic><topic>Materials Testing</topic><topic>Molecular Conformation</topic><topic>Nanostructures - chemistry</topic><topic>Nanostructures - ultrastructure</topic><topic>Nanotechnology - methods</topic><topic>Particle Size</topic><topic>Surface Properties</topic><topic>Zinc Oxide - chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>She, Juncong</creatorcontrib><creatorcontrib>Xiao, Zhiming</creatorcontrib><creatorcontrib>Yang, Yuhua</creatorcontrib><creatorcontrib>Deng, Shaozhi</creatorcontrib><creatorcontrib>Chen, Jun</creatorcontrib><creatorcontrib>Yang, Guowei</creatorcontrib><creatorcontrib>Xu, Ningsheng</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>She, Juncong</au><au>Xiao, Zhiming</au><au>Yang, Yuhua</au><au>Deng, Shaozhi</au><au>Chen, Jun</au><au>Yang, Guowei</au><au>Xu, Ningsheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlation between Resistance and Field Emission Performance of Individual ZnO One-Dimensional Nanostructures</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2008-10-28</date><risdate>2008</risdate><volume>2</volume><issue>10</issue><spage>2015</spage><epage>2022</epage><pages>2015-2022</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>Both electrical and field emission measurements were carried out to study the correlation between resistance and field emission performance of individual one-dimensional (1D) ZnO nanostructures. Three types of 1D ZnO nanostructures were investigated (i.e., agave-like shape, pencil-like shape, and hierarchical structure) and were prepared by thermal chemical vapor transport and condensation without using any catalyst. The 1D ZnO nanostructures have obvious differences in resistance and thus conductivity from type to type. In addition, in the same type of 1D ZnO nanostructure, each individual emitter may also have variation in resistance and thus in conductivity. The field emission performance of the ZnO emitters was found to be strongly correlated with the resistance of each individual ZnO nanostructure: (i) a ZnO emitter with low resistance will have better emission; (ii) a high resistance region in a ZnO nanostructure is liable to the initiation of a vacuum breakdown event. 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| subjects | Crystallization - methods Electric Impedance Electrochemistry - methods Electromagnetic Fields Macromolecular Substances - chemistry Materials Testing Molecular Conformation Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - methods Particle Size Surface Properties Zinc Oxide - chemistry |
| title | Correlation between Resistance and Field Emission Performance of Individual ZnO One-Dimensional Nanostructures |
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