Characterizing single crystal surfaces using high resolution electron diffraction

Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain...

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Veröffentlicht in:	Analytical and bioanalytical chemistry 2004-06, Vol.379 (4), p.588-593
Hauptverfasser:	Thien, D, Meyer zu Heringdorf, F.-J, Kury, P, Horn-von Hoegen, M
Format:	Artikel
Sprache:	eng
Schlagworte:	ambient temperature Crystallization energy Materials Testing Microscopy, Electron, Transmission - instrumentation Microscopy, Electron, Transmission - methods silicon Silicon - chemistry Surface Properties
Online-Zugang:	Volltext
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