Characterizing single crystal surfaces using high resolution electron diffraction
Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain...
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| Veröffentlicht in: | Analytical and bioanalytical chemistry 2004-06, Vol.379 (4), p.588-593 |
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| container_issue | 4 |
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| container_title | Analytical and bioanalytical chemistry |
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| creator | Thien, D Meyer zu Heringdorf, F.-J Kury, P Horn-von Hoegen, M |
| description | Characterization and controlled manipulation of surfaces is a crucial factor in modern processing of the technologically relevant Si(100) surface. Using spot profile analyzing low energy electron diffraction, the morphological changes from a single stepped vicinal Si(100) surface to a single-domain (2×1) reconstructed surface have been investigated in situ during Si deposition. The temperature range for formation of this kinetically-stabilized single-domain surface was found to be 400–500 °C. This single-domain surface could be preserved for further characterization and experiments after quenching to room temperature. |
| doi_str_mv | 10.1007/s00216-004-2547-8 |
| format | Article |
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| language | eng |
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| source | MEDLINE; SpringerLink Journals |
| subjects | ambient temperature Crystallization energy Materials Testing Microscopy, Electron, Transmission - instrumentation Microscopy, Electron, Transmission - methods silicon Silicon - chemistry Surface Properties |
| title | Characterizing single crystal surfaces using high resolution electron diffraction |
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