Influence of substrate temperature on formation of ultrananocrystalline diamond films deposited by HFCVD argon-rich gas mixture

The influence of the substrate temperature on the formation of ultrananocrystalline diamond (UNCD) thin films, prepared by an argon-based hot filament chemical vapor deposition (HFCVD), is discussed in this work. The gas mixture used for diamond growth was 1 vol.% methane, 9 vol.% hydrogen and 90 vo...

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Veröffentlicht in:	Diamond and related materials 2009-10, Vol.18 (10), p.1283-1288
Hauptverfasser:	Barbosa, D.C., Almeida, F.A., Silva, R.F., Ferreira, N.G., Trava-Airoldi, V.J., Corat, E.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Activation energy Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Diamond Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Fullerenes and related materials diamonds, graphite Growth kinetics HFCVD Materials science Methods of deposition of films and coatings film growth and epitaxy Physics sp 2 growth Specific materials Surface and interface electron states Surface states, band structure, electron density of states Theory and models of film growth
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