Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications
This paper presents the depth profile of oxide trap density, extracted from the dual gate processed thermally grown oxide in NO ambient and remote plasma nitrided oxides by using multifrequency and multitemperature charge pumping technique in conjunction with the tunneling model of trapped charges....
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2009-09, Vol.8 (5), p.654-658 |
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| container_title | IEEE transactions on nanotechnology |
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| creator | Younghwan Son Chang-Ki Baek In-Shik Han Han-Soo Joo Tae-Gyu Goo Ooksang Yoo Wonho Choi Hee-Hwan Ji Hi-Deok Lee Kim, D.M. |
| description | This paper presents the depth profile of oxide trap density, extracted from the dual gate processed thermally grown oxide in NO ambient and remote plasma nitrided oxides by using multifrequency and multitemperature charge pumping technique in conjunction with the tunneling model of trapped charges. Nitrided oxide is widely used to improve the reliability of nanoscale MOSFETs because it can decrease the degradation of gate oxide due to the generation of traps therein. Based on the measurement, the optimum nitrogen concentration in such typical nitrided process is discussed in correlation with the gate oxide thickness for nanoscale CMOSFETs. |
| doi_str_mv | 10.1109/TNANO.2008.2009760 |
| format | Article |
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Nitrided oxide is widely used to improve the reliability of nanoscale MOSFETs because it can decrease the degradation of gate oxide due to the generation of traps therein. Based on the measurement, the optimum nitrogen concentration in such typical nitrided process is discussed in correlation with the gate oxide thickness for nanoscale CMOSFETs.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2008.2009760</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Charge pumps ; CMOSFETs ; Density ; Electron traps ; Electronics ; Exact sciences and technology ; Frequency ; Gates ; Ion nitriding ; Molecular electronics, nanoelectronics ; MOSFET circuits ; MOSFETs ; Multifrequency and multitemperature charge pumping (CP) ; Nanocomposites ; Nanomaterials ; Nanostructure ; oxide trap density ; Oxides ; Plasma density ; Plasma devices ; Plasma measurements ; remote plasma nitrided oxide (RPNO) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Thickness measurement ; Transistors ; Tunneling</subject><ispartof>IEEE transactions on nanotechnology, 2009-09, Vol.8 (5), p.654-658</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Nitrided oxide is widely used to improve the reliability of nanoscale MOSFETs because it can decrease the degradation of gate oxide due to the generation of traps therein. Based on the measurement, the optimum nitrogen concentration in such typical nitrided process is discussed in correlation with the gate oxide thickness for nanoscale CMOSFETs.</description><subject>Applied sciences</subject><subject>Charge pumps</subject><subject>CMOSFETs</subject><subject>Density</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Gates</subject><subject>Ion nitriding</subject><subject>Molecular electronics, nanoelectronics</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>Multifrequency and multitemperature charge pumping (CP)</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>oxide trap density</subject><subject>Oxides</subject><subject>Plasma density</subject><subject>Plasma devices</subject><subject>Plasma measurements</subject><subject>remote plasma nitrided oxide (RPNO)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Thickness measurement</subject><subject>Transistors</subject><subject>Tunneling</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUtP3DAUhSNUpFLoHygbqxLtKuD3YzmaUooEmUWnUnfWjcdWPQpJsDMS9NfjMCMWXXRjW-d-9-hen6r6RPAlIdhcrZtFs7qkGOv5MErio-qEGE7qIol35S2YrAkVv99XH3LeYkyUFPqk2i7_QAI3-RT_whSHHg0BNR5SfdsXMYDzaPUUNx6tE4zom-9znJ5R7FETp1T0zb6cURgSaqAfsoPOo_vVz-_Xa7QYxy66V-N8Vh0H6LL_eLhPq18FWf6o71Y3t8vFXe24YFOtOVfGCQCtOGaEcokxk-CUMYZQ5w2lbBOIchuhdGAtbluHuW4DmFYVjZ1WX_e-Yxoedz5P9iFm57sOej_sstVKYMqkloX88l-SSUYNl6SAn_8Bt8Mu9WULW2ZimgplCkT3kEtDzskHO6b4AOnZEmznlOxrSnZOyR5SKk0XB2eYPy4k6F3Mb52UmDICnkc933PRe_9W5lKXjAl7AXpomeA</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>Younghwan Son</creator><creator>Chang-Ki Baek</creator><creator>In-Shik Han</creator><creator>Han-Soo Joo</creator><creator>Tae-Gyu Goo</creator><creator>Ooksang Yoo</creator><creator>Wonho Choi</creator><creator>Hee-Hwan Ji</creator><creator>Hi-Deok Lee</creator><creator>Kim, D.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Applied sciences Charge pumps CMOSFETs Density Electron traps Electronics Exact sciences and technology Frequency Gates Ion nitriding Molecular electronics, nanoelectronics MOSFET circuits MOSFETs Multifrequency and multitemperature charge pumping (CP) Nanocomposites Nanomaterials Nanostructure oxide trap density Oxides Plasma density Plasma devices Plasma measurements remote plasma nitrided oxide (RPNO) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thickness measurement Transistors Tunneling |
| title | Characterization of Near-Interface Oxide Trap Density in Nitrided Oxides for Nanoscale MOSFET Applications |
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