Electrical Characteristics of Hybrid Nanoparticle-Nanowire Devices
Gold nanoparticles synthesized by a colloidal method were deposited in an Al 2 O 3 dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al 2 O 3 -coated ZnO nanowire was confirmed by...
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2009-09, Vol.8 (5), p.650-653 |
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| container_end_page | 653 |
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| container_title | IEEE transactions on nanotechnology |
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| creator | JEONG, Dong-Young KEEM, Kihyun PARK, Byoungjun CHO, Kyoungah KIM, Sangsig |
| description | Gold nanoparticles synthesized by a colloidal method were deposited in an Al 2 O 3 dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al 2 O 3 -coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticle-nanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2 O 3 tunneling oxide layer. |
| doi_str_mv | 10.1109/TNANO.2009.2021995 |
| format | Article |
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These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al 2 O 3 -coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticle-nanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2 O 3 tunneling oxide layer.</description><identifier>ISSN: 1536-125X</identifier><identifier>EISSN: 1941-0085</identifier><identifier>DOI: 10.1109/TNANO.2009.2021995</identifier><identifier>CODEN: ITNECU</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Design. Technologies. Operation analysis. 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These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al 2 O 3 -coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticle-nanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al 2 O 3 tunneling oxide layer.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Dielectrics</subject><subject>Electric variables</subject><subject>Electron traps</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FET logic devices</subject><subject>FET memory integrated circuits</subject><subject>FETs</subject><subject>Gold</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Materials science</subject><subject>memories</subject><subject>Nanoparticles</subject><subject>Nanoscale devices</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>nanotechnology</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Design. Technologies. Operation analysis. Testing Dielectrics Electric variables Electron traps Electronics Exact sciences and technology FET logic devices FET memory integrated circuits FETs Gold Integrated circuits Integrated circuits by function (including memories and processors) Materials science memories Nanoparticles Nanoscale devices Nanoscale materials and structures: fabrication and characterization nanotechnology Other topics in nanoscale materials and structures Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Transmission electron microscopy Voltage Zinc oxide |
| title | Electrical Characteristics of Hybrid Nanoparticle-Nanowire Devices |
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