Evaluation of the crystalline quality of b-Ga(2)O(3) films by optical absorption measurements

Evaluation of the crystalline quality of b-Ga(2)O(3) films by optical absorption measurements

Si doped b-Ga(2)O(3) films were grown on Si substrate by RF magnetron sputtering. The Si concentration varied from 0% to 50%. After the deposition of the amorphous Ga(2)O(3) on the substrate, thermal annealing at 600 'C was performed in nitrogen ambient. Polycrystalline b-Ga(2)O(3) films were g...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (23-24), p.4854-4857
Hauptverfasser: Takakura, K, Koga, D, Ohyama, H, Rafi, J M, Kayamoto, Y, Shibuya, M, Yamamoto, H, Vanhellemont, J
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container_issue 23-24
container_start_page 4854
container_title Physica. B, Condensed matter
container_volume 404
creator Takakura, K
Koga, D
Ohyama, H
Rafi, J M
Kayamoto, Y
Shibuya, M
Yamamoto, H
Vanhellemont, J
description Si doped b-Ga(2)O(3) films were grown on Si substrate by RF magnetron sputtering. The Si concentration varied from 0% to 50%. After the deposition of the amorphous Ga(2)O(3) on the substrate, thermal annealing at 600 'C was performed in nitrogen ambient. Polycrystalline b-Ga(2)O(3) films were grown on Si or quartz substrates; however, other mixed phases of Si, Ga and O were not observed. From the measurement of optical absorption coefficient, it is concluded that the b-Ga(2)O(3) energy gap increases with increasing Si concentration in the deposited film.
doi_str_mv 10.1016/j.physb.2009.08.167
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title Evaluation of the crystalline quality of b-Ga(2)O(3) films by optical absorption measurements
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