C60 ion sputtering of layered organic materials

Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (2.5 nm) in comparison to the Irganox1010 (55 or 90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputterin...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied surface science 2008-12, Vol.255 (4), p.962-965
Hauptverfasser: Shard, Alexander G., Green, Felicia M., Gilmore, Ian S.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 965
container_issue 4
container_start_page 962
container_title Applied surface science
container_volume 255
creator Shard, Alexander G.
Green, Felicia M.
Gilmore, Ian S.
description Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (2.5 nm) in comparison to the Irganox1010 (55 or 90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.
doi_str_mv 10.1016/j.apsusc.2008.05.031
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_36305912</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>36305912</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1272-bdf7019c96acb77ca0263696f91102352dcdb7305a0c00d06dd9293b27a894c83</originalsourceid><addsrcrecordid>eNotkD1vhCAchxnapNdrv0EHpm5yf0BBxsb0LbmkSzsTBLxoVCzocN--Gjs9w-9leBB6okAoUHHqiJnSkixhACWBggCnN-iwRirLOWd36D6lDoCyUvIDOlUCcBtGnKZlnn1sxwsODe7N1UfvcIgXM7YWD2bLTJ8e0G2zwj_-84h-3l6_q4_s_PX-Wb2cM0uZZFntGglUWSWMraW0BpjgQolGUQqMF8xZV0sOhQEL4EA4p5jiNZOmVLkt-RE9779TDL-LT7Me2mR935vRhyVpLtaxomwt5nvRxpBS9I2eYjuYeNUU9GZEd3o3ojcjGgq9GuF_mWBW7g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>36305912</pqid></control><display><type>article</type><title>C60 ion sputtering of layered organic materials</title><source>Elsevier ScienceDirect Journals</source><creator>Shard, Alexander G. ; Green, Felicia M. ; Gilmore, Ian S.</creator><creatorcontrib>Shard, Alexander G. ; Green, Felicia M. ; Gilmore, Ian S.</creatorcontrib><description>Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (2.5 nm) in comparison to the Irganox1010 (55 or 90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.</description><identifier>ISSN: 0169-4332</identifier><identifier>DOI: 10.1016/j.apsusc.2008.05.031</identifier><language>eng</language><ispartof>Applied surface science, 2008-12, Vol.255 (4), p.962-965</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1272-bdf7019c96acb77ca0263696f91102352dcdb7305a0c00d06dd9293b27a894c83</citedby><cites>FETCH-LOGICAL-c1272-bdf7019c96acb77ca0263696f91102352dcdb7305a0c00d06dd9293b27a894c83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Shard, Alexander G.</creatorcontrib><creatorcontrib>Green, Felicia M.</creatorcontrib><creatorcontrib>Gilmore, Ian S.</creatorcontrib><title>C60 ion sputtering of layered organic materials</title><title>Applied surface science</title><description>Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (2.5 nm) in comparison to the Irganox1010 (55 or 90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.</description><issn>0169-4332</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkD1vhCAchxnapNdrv0EHpm5yf0BBxsb0LbmkSzsTBLxoVCzocN--Gjs9w-9leBB6okAoUHHqiJnSkixhACWBggCnN-iwRirLOWd36D6lDoCyUvIDOlUCcBtGnKZlnn1sxwsODe7N1UfvcIgXM7YWD2bLTJ8e0G2zwj_-84h-3l6_q4_s_PX-Wb2cM0uZZFntGglUWSWMraW0BpjgQolGUQqMF8xZV0sOhQEL4EA4p5jiNZOmVLkt-RE9779TDL-LT7Me2mR935vRhyVpLtaxomwt5nvRxpBS9I2eYjuYeNUU9GZEd3o3ojcjGgq9GuF_mWBW7g</recordid><startdate>20081215</startdate><enddate>20081215</enddate><creator>Shard, Alexander G.</creator><creator>Green, Felicia M.</creator><creator>Gilmore, Ian S.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20081215</creationdate><title>C60 ion sputtering of layered organic materials</title><author>Shard, Alexander G. ; Green, Felicia M. ; Gilmore, Ian S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1272-bdf7019c96acb77ca0263696f91102352dcdb7305a0c00d06dd9293b27a894c83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shard, Alexander G.</creatorcontrib><creatorcontrib>Green, Felicia M.</creatorcontrib><creatorcontrib>Gilmore, Ian S.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shard, Alexander G.</au><au>Green, Felicia M.</au><au>Gilmore, Ian S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>C60 ion sputtering of layered organic materials</atitle><jtitle>Applied surface science</jtitle><date>2008-12-15</date><risdate>2008</risdate><volume>255</volume><issue>4</issue><spage>962</spage><epage>965</epage><pages>962-965</pages><issn>0169-4332</issn><abstract>Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (2.5 nm) in comparison to the Irganox1010 (55 or 90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.</abstract><doi>10.1016/j.apsusc.2008.05.031</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0169-4332
ispartof Applied surface science, 2008-12, Vol.255 (4), p.962-965
issn 0169-4332
language eng
recordid cdi_proquest_miscellaneous_36305912
source Elsevier ScienceDirect Journals
title C60 ion sputtering of layered organic materials
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T13%3A48%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=C60%20ion%20sputtering%20of%20layered%20organic%20materials&rft.jtitle=Applied%20surface%20science&rft.au=Shard,%20Alexander%20G.&rft.date=2008-12-15&rft.volume=255&rft.issue=4&rft.spage=962&rft.epage=965&rft.pages=962-965&rft.issn=0169-4332&rft_id=info:doi/10.1016/j.apsusc.2008.05.031&rft_dat=%3Cproquest_cross%3E36305912%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=36305912&rft_id=info:pmid/&rfr_iscdi=true