Transparent conducting amorphous Zn–In–Sn–O anode for flexible organic light-emitting diodes
Amorphous Zn–In–Sn–O (ZITO) films are grown by an rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto a flexible polyether sulfone (PES) substrate. The films exhibit resistivity as low as 1.22 × 1 0 − 3 Ω cm and optical transparency comparable to greater than that of Sn-d...
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| Veröffentlicht in: | Solid state communications 2010, Vol.150 (3), p.223-226 |
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| container_title | Solid state communications |
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| creator | Heo, Gi-Seok Matsumoto, Yuji Gim, In-Gi Lee, Hyun-Kee Park, Jong-Woon Kim, Tae-Won |
| description | Amorphous Zn–In–Sn–O (ZITO) films are grown by an rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto a flexible polyether sulfone (PES) substrate. The films exhibit resistivity as low as
1.22
×
1
0
−
3
Ω
cm
and optical transparency comparable to greater than that of Sn-doped indium oxide (ITO) films. The amorphous ZITO films have good mechanical durability compared to ITO films against the external dynamic stress measured by the bending tester. The deposited ZITO film has been used as a transparent anode in fabrication of the flexible organic light-emitting diode (OLED) by the cluster organic evaporator system. The amorphous ZITO anode-based flexible OLED shows comparable or superior current density and luminance characteristics compared to that of the amorphous ITO-based OLED. |
| doi_str_mv | 10.1016/j.ssc.2009.10.042 |
| format | Article |
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1.22
×
1
0
−
3
Ω
cm
and optical transparency comparable to greater than that of Sn-doped indium oxide (ITO) films. The amorphous ZITO films have good mechanical durability compared to ITO films against the external dynamic stress measured by the bending tester. The deposited ZITO film has been used as a transparent anode in fabrication of the flexible organic light-emitting diode (OLED) by the cluster organic evaporator system. The amorphous ZITO anode-based flexible OLED shows comparable or superior current density and luminance characteristics compared to that of the amorphous ITO-based OLED.</description><identifier>ISSN: 0038-1098</identifier><identifier>EISSN: 1879-2766</identifier><identifier>DOI: 10.1016/j.ssc.2009.10.042</identifier><identifier>CODEN: SSCOA4</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>A. ITO ; A. ZITO ; A. ZnO ; A. Zn–In–Sn–O ; Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Solid state communications, 2010, Vol.150 (3), p.223-226</ispartof><rights>2009</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c424t-4779bb705c60f8e34ed66194cac102b03178dfbc6de49965add7db935b3b96553</citedby><cites>FETCH-LOGICAL-c424t-4779bb705c60f8e34ed66194cac102b03178dfbc6de49965add7db935b3b96553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.ssc.2009.10.042$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,4024,27923,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22289517$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Heo, Gi-Seok</creatorcontrib><creatorcontrib>Matsumoto, Yuji</creatorcontrib><creatorcontrib>Gim, In-Gi</creatorcontrib><creatorcontrib>Lee, Hyun-Kee</creatorcontrib><creatorcontrib>Park, Jong-Woon</creatorcontrib><creatorcontrib>Kim, Tae-Won</creatorcontrib><title>Transparent conducting amorphous Zn–In–Sn–O anode for flexible organic light-emitting diodes</title><title>Solid state communications</title><description>Amorphous Zn–In–Sn–O (ZITO) films are grown by an rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto a flexible polyether sulfone (PES) substrate. The films exhibit resistivity as low as
1.22
×
1
0
−
3
Ω
cm
and optical transparency comparable to greater than that of Sn-doped indium oxide (ITO) films. The amorphous ZITO films have good mechanical durability compared to ITO films against the external dynamic stress measured by the bending tester. The deposited ZITO film has been used as a transparent anode in fabrication of the flexible organic light-emitting diode (OLED) by the cluster organic evaporator system. The amorphous ZITO anode-based flexible OLED shows comparable or superior current density and luminance characteristics compared to that of the amorphous ITO-based OLED.</description><subject>A. ITO</subject><subject>A. ZITO</subject><subject>A. ZnO</subject><subject>A. Zn–In–Sn–O</subject><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0038-1098</issn><issn>1879-2766</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kDtOxDAQhi0EEsvjAHRpoMtiO4kdiwohHishUQANjeXHZPEqay92FkHHHbghJ8FhESXNWGN984_mQ-iI4CnBhJ0upimZKcVY5H6Ka7qFJqTloqScsW00wbhqS4JFu4v2UlpgjHnLyQTph6h8WqkIfihM8HZtBufnhVqGuHoO61Q8-a-Pz9lY7sdyVygfLBRdiEXXw5vTPRQhzpV3pujd_HkoYemGnxDrMpkO0E6n-gSHv-8-ery6fLi4KW_vrmcX57elqWk9lDXnQmuOG8Nw10JVg2WMiNooQzDVuCK8tZ02zEItBGuUtdxqUTW60rltqn10ssldxfCyhjTIpUsG-l55yIfIilVZAq0zSDagiSGlCJ1cRbdU8V0SLEebciGzTTnaHL-yzTxz_BuuklF9l60Zl_4GKaWtaAjP3NmGg3zpq4Mok3HgDVgXwQzSBvfPlm9CFI5G</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>Heo, Gi-Seok</creator><creator>Matsumoto, Yuji</creator><creator>Gim, In-Gi</creator><creator>Lee, Hyun-Kee</creator><creator>Park, Jong-Woon</creator><creator>Kim, Tae-Won</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2010</creationdate><title>Transparent conducting amorphous Zn–In–Sn–O anode for flexible organic light-emitting diodes</title><author>Heo, Gi-Seok ; Matsumoto, Yuji ; Gim, In-Gi ; Lee, Hyun-Kee ; Park, Jong-Woon ; Kim, Tae-Won</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c424t-4779bb705c60f8e34ed66194cac102b03178dfbc6de49965add7db935b3b96553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>A. ITO</topic><topic>A. ZITO</topic><topic>A. ZnO</topic><topic>A. Zn–In–Sn–O</topic><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Heo, Gi-Seok</creatorcontrib><creatorcontrib>Matsumoto, Yuji</creatorcontrib><creatorcontrib>Gim, In-Gi</creatorcontrib><creatorcontrib>Lee, Hyun-Kee</creatorcontrib><creatorcontrib>Park, Jong-Woon</creatorcontrib><creatorcontrib>Kim, Tae-Won</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid state communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Heo, Gi-Seok</au><au>Matsumoto, Yuji</au><au>Gim, In-Gi</au><au>Lee, Hyun-Kee</au><au>Park, Jong-Woon</au><au>Kim, Tae-Won</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent conducting amorphous Zn–In–Sn–O anode for flexible organic light-emitting diodes</atitle><jtitle>Solid state communications</jtitle><date>2010</date><risdate>2010</risdate><volume>150</volume><issue>3</issue><spage>223</spage><epage>226</epage><pages>223-226</pages><issn>0038-1098</issn><eissn>1879-2766</eissn><coden>SSCOA4</coden><abstract>Amorphous Zn–In–Sn–O (ZITO) films are grown by an rf magnetron cosputtering system from ceramic oxide targets of ZnO and ITO onto a flexible polyether sulfone (PES) substrate. The films exhibit resistivity as low as
1.22
×
1
0
−
3
Ω
cm
and optical transparency comparable to greater than that of Sn-doped indium oxide (ITO) films. The amorphous ZITO films have good mechanical durability compared to ITO films against the external dynamic stress measured by the bending tester. The deposited ZITO film has been used as a transparent anode in fabrication of the flexible organic light-emitting diode (OLED) by the cluster organic evaporator system. The amorphous ZITO anode-based flexible OLED shows comparable or superior current density and luminance characteristics compared to that of the amorphous ITO-based OLED.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.ssc.2009.10.042</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1098 |
| ispartof | Solid state communications, 2010, Vol.150 (3), p.223-226 |
| issn | 0038-1098 1879-2766 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_36303824 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | A. ITO A. ZITO A. ZnO A. Zn–In–Sn–O Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
| title | Transparent conducting amorphous Zn–In–Sn–O anode for flexible organic light-emitting diodes |
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