Boron Profile Sharpening in Ultra-Shallow p+-n Junction Produced by Plasma Immersion Ion Implantation from BF3 Plasma

Boron Profile Sharpening in Ultra-Shallow p+-n Junction Produced by Plasma Immersion Ion Implantation from BF3 Plasma

We have investigated plasma immersion ion implantation (PI3) of boron with energies of 500 eV (doses up to 2X1015 cm-2) from BF3 plasma with He pre-amorphizing implantation (PAI) (energy 3 keV, dose 5X1016 cm-2). Implanted samples were subjected to RTA (T = 900 to 1050 deg C, t = 2 to 24 sec and spi...

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Hauptverfasser: Lukichev, V, Rudenko, K, Orlikovsky, A, Pustovit, A, Vyatkin, A
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creator Lukichev, V
Rudenko, K
Orlikovsky, A
Pustovit, A
Vyatkin, A
description We have investigated plasma immersion ion implantation (PI3) of boron with energies of 500 eV (doses up to 2X1015 cm-2) from BF3 plasma with He pre-amorphizing implantation (PAI) (energy 3 keV, dose 5X1016 cm-2). Implanted samples were subjected to RTA (T = 900 to 1050 deg C, t = 2 to 24 sec and spike anneal). SIMS analysis of boron profiles revealed its anomalous behavior. For short RTA times the profile tail (below 5X1019 cm-3) moves toward the surface and then, as in the usual diffusion, toward the bulk at longer annealing times.
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Implanted samples were subjected to RTA (T = 900 to 1050 deg C, t = 2 to 24 sec and spike anneal). SIMS analysis of boron profiles revealed its anomalous behavior. 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title Boron Profile Sharpening in Ultra-Shallow p+-n Junction Produced by Plasma Immersion Ion Implantation from BF3 Plasma
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