6H-SiC Lateral JFETs for Analog Integrated Circuits
This paper reports fabrication and electrical characterization of 6H-SiC n-channel, depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration. Electrical characteri...
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| creator | Mehregany, Mehran Garverick, Steven Fu, Xiao An Patil, Amita Neudeck, Philip G. Beheim, Glenn M. |
| description | This paper reports fabrication and electrical characterization of 6H-SiC n-channel,
depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog
integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration.
Electrical characteristics of the resulting JFET devices have been measured across the wafer as a
function of temperature, from room temperature to 450oC. The results indicate that the JFETs are
suitable for high-gain amplifiers in high-temperature sensor signal processing circuits. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.600-603.1099 |
| format | Conference Proceeding |
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depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog
integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration.
Electrical characteristics of the resulting JFET devices have been measured across the wafer as a
function of temperature, from room temperature to 450oC. The results indicate that the JFETs are
suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.600-603.1099</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2009, Vol.600-603, p.1099-1102</ispartof><rights>2009 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-2968-4712</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/768?width=600</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Mehregany, Mehran</creatorcontrib><creatorcontrib>Garverick, Steven</creatorcontrib><creatorcontrib>Fu, Xiao An</creatorcontrib><creatorcontrib>Patil, Amita</creatorcontrib><creatorcontrib>Neudeck, Philip G.</creatorcontrib><creatorcontrib>Beheim, Glenn M.</creatorcontrib><title>6H-SiC Lateral JFETs for Analog Integrated Circuits</title><title>Materials science forum</title><description>This paper reports fabrication and electrical characterization of 6H-SiC n-channel,
depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog
integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration.
Electrical characteristics of the resulting JFET devices have been measured across the wafer as a
function of temperature, from room temperature to 450oC. The results indicate that the JFETs are
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depletion-mode, junction-field-effect transistors (JFETs) for use in high-temperature analog
integrated circuits for sensing and control in propulsion, power systems, and geothermal exploration.
Electrical characteristics of the resulting JFET devices have been measured across the wafer as a
function of temperature, from room temperature to 450oC. The results indicate that the JFETs are
suitable for high-gain amplifiers in high-temperature sensor signal processing circuits.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.600-603.1099</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-2968-4712</orcidid></addata></record> |
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| identifier | ISSN: 0255-5476 |
| ispartof | Materials science forum, 2009, Vol.600-603, p.1099-1102 |
| issn | 0255-5476 1662-9752 1662-9752 |
| language | eng |
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| source | Scientific.net Journals |
| title | 6H-SiC Lateral JFETs for Analog Integrated Circuits |
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