4H Silicon Carbide Etching Using Chlorine Trifluoride Gas

The etching technology for 4H-silicon carbide (SiC) was studied using ClF3 gas at 673-973K, 100 % and atmospheric pressure in a horizontal reactor. The etch rate, greater than 10 um/min, can be obtained for both the C-face and Si-face at substrate temperatures higher than 723 K. The etch rate increa...

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Hauptverfasser:	Fukae, Takaya, Gao, Yuan, Habuka, Hitoshi, Tanaka, Keiko, Arai, Kazuo, Okumura, Hajime, Fukai, Yasushi, Kato, Tomohisa, Katsumi, Yusuke, Miura, Yutaka
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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