Strong below-band gap absorption of N-rich side GaNSb by metal-organic chemical vapor deposition

Metalorganic chemical vapor deposition was used to grow N-rich side GaNSb alloys under different growth conditions, and, for the first time, a considerable amount of Sb was incorporated into the GaNSb. The amount of Sb increased as the growth temperature decreased, but the maximal Sb content seemed...

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Veröffentlicht in:Journal of materials research 2009-12, Vol.24 (12), p.3569-3572
Hauptverfasser: Moon, Se-Hoon, Do, Hyung-A, Park, Joonmo, Ryu, Sang-Wan
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Sprache:eng
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