Strong below-band gap absorption of N-rich side GaNSb by metal-organic chemical vapor deposition
Metalorganic chemical vapor deposition was used to grow N-rich side GaNSb alloys under different growth conditions, and, for the first time, a considerable amount of Sb was incorporated into the GaNSb. The amount of Sb increased as the growth temperature decreased, but the maximal Sb content seemed...
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Veröffentlicht in: | Journal of materials research 2009-12, Vol.24 (12), p.3569-3572 |
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Format: | Artikel |
Sprache: | eng |
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