Evaluation of Schottky junction parameters from current–voltage characteristics exhibiting large excess currents

A new method is presented to extract the junction parameters from current–voltage characteristics of Schottky junctions exhibiting high leakage or other excess currents at low bias and current levels, for reduction of errors and uncertainity of the evaluation. In contrary to the Richardson plot, usi...

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Veröffentlicht in:	Applied surface science 2008-11, Vol.255 (3), p.743-745
1. Verfasser:	HORVATH, Zs. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Current–voltage characteristics Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology GaInAsSb InP Interfaces Leakage currents Miscellaneous Parameter extraction Physics Schottky junction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor-device characterization, design, and modeling Surface barrier, boundary, and point contact devices Surface double layers, schottky barriers, and work functions
Online-Zugang:	Volltext
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