Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2–2.7,...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (23-24), p.4999-5001
Hauptverfasser: Yonenaga, I., Ohno, Y., Taishi, T., Tokumoto, Y.
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Sprache:eng
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Dislocation mobility
Mechanical stability
Wide band-gap semiconductors
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Taishi, T.
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description The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2–2.7, 0.7–1.2 and 0.5–0.7eV in GaN, ZnO and ZnSe, respectively. Dislocations in II–VI compounds ZnO and ZnSe are essentially mobile.
doi_str_mv 10.1016/j.physb.2009.08.196
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subjects Dislocation mobility
Mechanical stability
Wide band-gap semiconductors
title Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors
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