Novel ZrInZnO Thin-film Transistor with Excellent Stability

Novel ZrInZnO semiconductor materials to resolve transistor instability for active‐matrix organic light‐emitting diodes are proposed. The ZrInZnO film is preprared using a cosputtering method, and presents a nanocrystal structure embedded in an amorphous matrix. The thin‐film transistors fabricated have good electrical performances as well as excellent stability under long‐term bias stresses.