Improved etching method for microelectronic devices with supercritical carbon dioxide
Aqueous etchants used in traditional wet etching for the production of integrated circuits and MEMS devices hinder the processes and pose environmental difficulties. Therefore, we developed an improved dry etching method with HF/Pyridine (7:3) in supercritical carbon dioxide. Etch rates of BPSG, P-T...
Gespeichert in:
| Veröffentlicht in: | Microelectronic engineering 2009-02, Vol.86 (2), p.128-131 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 131 |
|---|---|
| container_issue | 2 |
| container_start_page | 128 |
| container_title | Microelectronic engineering |
| container_volume | 86 |
| creator | Bae, Jae Hyun Alam, Md. Zahangir Jung, Jae Mok Gal, Yeong-Soon Lee, Hyosan Kim, Hyun Gyu Lim, Kwon Taek |
| description | Aqueous etchants used in traditional wet etching for the production of integrated circuits and MEMS devices hinder the processes and pose environmental difficulties. Therefore, we developed an improved dry etching method with HF/Pyridine (7:3) in supercritical carbon dioxide. Etch rates of BPSG, P-TEOS, Thermal SiO
2 and SiN with dry etching method were several times higher than those in wet etching. Etch rates were found to be a function of temperature, HF concentration, and the kind of co-solvents. The presence of alcoholic co-solvents, especially IPA with HF/Pyridine etchant greatly increased the etch rate of BPSG. Etch selectivity could be controlled with the etchant concentration. |
| doi_str_mv | 10.1016/j.mee.2008.10.003 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_36024584</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931708004577</els_id><sourcerecordid>36024584</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-4ad6c47f02486c8090eb71b565681d3b5ff79ab67b7e3d9854435703ab3afbd33</originalsourceid><addsrcrecordid>eNp9kE1PAyEURYnRxFr9Ae7Y6G5GKMPAxJVp_EqauLFrwscbSzMzVJhW_ffStHHpijxy3oV7ELqmpKSE1nfrsgcoZ4TIPJeEsBM0oVKwgvNanqJJZkTRMCrO0UVKa5LnisgJWr72mxh24DCMduWHD9zDuAoOtyHi3tsYoAM7xjB4ix3svIWEv_y4wmm7gWijH73VHbY6mjBg58O3d3CJzlrdJbg6nlO0fHp8n78Ui7fn1_nDorCMy7GotKttJVoyq2RtJWkIGEENr_OfqWOGt61otKmFEcBcI3lVMS4I04bp1jjGpuj2kJs7fG4hjar3yULX6QHCNilW52guqwzSA5gLpRShVZvoex1_FCVqL1CtVRao9gL3V1lg3rk5huuUK7ZRD9anv8UZpYwJzjN3f-AgN915iCpZD4MF52NWp1zw_7zyC6aehr8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>36024584</pqid></control><display><type>article</type><title>Improved etching method for microelectronic devices with supercritical carbon dioxide</title><source>Access via ScienceDirect (Elsevier)</source><creator>Bae, Jae Hyun ; Alam, Md. Zahangir ; Jung, Jae Mok ; Gal, Yeong-Soon ; Lee, Hyosan ; Kim, Hyun Gyu ; Lim, Kwon Taek</creator><creatorcontrib>Bae, Jae Hyun ; Alam, Md. Zahangir ; Jung, Jae Mok ; Gal, Yeong-Soon ; Lee, Hyosan ; Kim, Hyun Gyu ; Lim, Kwon Taek</creatorcontrib><description>Aqueous etchants used in traditional wet etching for the production of integrated circuits and MEMS devices hinder the processes and pose environmental difficulties. Therefore, we developed an improved dry etching method with HF/Pyridine (7:3) in supercritical carbon dioxide. Etch rates of BPSG, P-TEOS, Thermal SiO
2 and SiN with dry etching method were several times higher than those in wet etching. Etch rates were found to be a function of temperature, HF concentration, and the kind of co-solvents. The presence of alcoholic co-solvents, especially IPA with HF/Pyridine etchant greatly increased the etch rate of BPSG. Etch selectivity could be controlled with the etchant concentration.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2008.10.003</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Electronics ; Etching ; Exact sciences and technology ; Integrated circuits ; MEMS ; Micro- and nanoelectromechanical devices (mems/nems) ; Sacrificial oxide ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiN ; Supercritical carbon dioxide</subject><ispartof>Microelectronic engineering, 2009-02, Vol.86 (2), p.128-131</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-4ad6c47f02486c8090eb71b565681d3b5ff79ab67b7e3d9854435703ab3afbd33</citedby><cites>FETCH-LOGICAL-c358t-4ad6c47f02486c8090eb71b565681d3b5ff79ab67b7e3d9854435703ab3afbd33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2008.10.003$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21133755$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bae, Jae Hyun</creatorcontrib><creatorcontrib>Alam, Md. Zahangir</creatorcontrib><creatorcontrib>Jung, Jae Mok</creatorcontrib><creatorcontrib>Gal, Yeong-Soon</creatorcontrib><creatorcontrib>Lee, Hyosan</creatorcontrib><creatorcontrib>Kim, Hyun Gyu</creatorcontrib><creatorcontrib>Lim, Kwon Taek</creatorcontrib><title>Improved etching method for microelectronic devices with supercritical carbon dioxide</title><title>Microelectronic engineering</title><description>Aqueous etchants used in traditional wet etching for the production of integrated circuits and MEMS devices hinder the processes and pose environmental difficulties. Therefore, we developed an improved dry etching method with HF/Pyridine (7:3) in supercritical carbon dioxide. Etch rates of BPSG, P-TEOS, Thermal SiO
2 and SiN with dry etching method were several times higher than those in wet etching. Etch rates were found to be a function of temperature, HF concentration, and the kind of co-solvents. The presence of alcoholic co-solvents, especially IPA with HF/Pyridine etchant greatly increased the etch rate of BPSG. Etch selectivity could be controlled with the etchant concentration.</description><subject>Applied sciences</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>MEMS</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>Sacrificial oxide</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiN</subject><subject>Supercritical carbon dioxide</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kE1PAyEURYnRxFr9Ae7Y6G5GKMPAxJVp_EqauLFrwscbSzMzVJhW_ffStHHpijxy3oV7ELqmpKSE1nfrsgcoZ4TIPJeEsBM0oVKwgvNanqJJZkTRMCrO0UVKa5LnisgJWr72mxh24DCMduWHD9zDuAoOtyHi3tsYoAM7xjB4ix3svIWEv_y4wmm7gWijH73VHbY6mjBg58O3d3CJzlrdJbg6nlO0fHp8n78Ui7fn1_nDorCMy7GotKttJVoyq2RtJWkIGEENr_OfqWOGt61otKmFEcBcI3lVMS4I04bp1jjGpuj2kJs7fG4hjar3yULX6QHCNilW52guqwzSA5gLpRShVZvoex1_FCVqL1CtVRao9gL3V1lg3rk5huuUK7ZRD9anv8UZpYwJzjN3f-AgN915iCpZD4MF52NWp1zw_7zyC6aehr8</recordid><startdate>20090201</startdate><enddate>20090201</enddate><creator>Bae, Jae Hyun</creator><creator>Alam, Md. Zahangir</creator><creator>Jung, Jae Mok</creator><creator>Gal, Yeong-Soon</creator><creator>Lee, Hyosan</creator><creator>Kim, Hyun Gyu</creator><creator>Lim, Kwon Taek</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090201</creationdate><title>Improved etching method for microelectronic devices with supercritical carbon dioxide</title><author>Bae, Jae Hyun ; Alam, Md. Zahangir ; Jung, Jae Mok ; Gal, Yeong-Soon ; Lee, Hyosan ; Kim, Hyun Gyu ; Lim, Kwon Taek</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-4ad6c47f02486c8090eb71b565681d3b5ff79ab67b7e3d9854435703ab3afbd33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>MEMS</topic><topic>Micro- and nanoelectromechanical devices (mems/nems)</topic><topic>Sacrificial oxide</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SiN</topic><topic>Supercritical carbon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bae, Jae Hyun</creatorcontrib><creatorcontrib>Alam, Md. Zahangir</creatorcontrib><creatorcontrib>Jung, Jae Mok</creatorcontrib><creatorcontrib>Gal, Yeong-Soon</creatorcontrib><creatorcontrib>Lee, Hyosan</creatorcontrib><creatorcontrib>Kim, Hyun Gyu</creatorcontrib><creatorcontrib>Lim, Kwon Taek</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bae, Jae Hyun</au><au>Alam, Md. Zahangir</au><au>Jung, Jae Mok</au><au>Gal, Yeong-Soon</au><au>Lee, Hyosan</au><au>Kim, Hyun Gyu</au><au>Lim, Kwon Taek</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved etching method for microelectronic devices with supercritical carbon dioxide</atitle><jtitle>Microelectronic engineering</jtitle><date>2009-02-01</date><risdate>2009</risdate><volume>86</volume><issue>2</issue><spage>128</spage><epage>131</epage><pages>128-131</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>Aqueous etchants used in traditional wet etching for the production of integrated circuits and MEMS devices hinder the processes and pose environmental difficulties. Therefore, we developed an improved dry etching method with HF/Pyridine (7:3) in supercritical carbon dioxide. Etch rates of BPSG, P-TEOS, Thermal SiO
2 and SiN with dry etching method were several times higher than those in wet etching. Etch rates were found to be a function of temperature, HF concentration, and the kind of co-solvents. The presence of alcoholic co-solvents, especially IPA with HF/Pyridine etchant greatly increased the etch rate of BPSG. Etch selectivity could be controlled with the etchant concentration.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2008.10.003</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2009-02, Vol.86 (2), p.128-131 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_36024584 |
| source | Access via ScienceDirect (Elsevier) |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Etching Exact sciences and technology Integrated circuits MEMS Micro- and nanoelectromechanical devices (mems/nems) Sacrificial oxide Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiN Supercritical carbon dioxide |
| title | Improved etching method for microelectronic devices with supercritical carbon dioxide |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T09%3A04%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improved%20etching%20method%20for%20microelectronic%20devices%20with%20supercritical%20carbon%20dioxide&rft.jtitle=Microelectronic%20engineering&rft.au=Bae,%20Jae%20Hyun&rft.date=2009-02-01&rft.volume=86&rft.issue=2&rft.spage=128&rft.epage=131&rft.pages=128-131&rft.issn=0167-9317&rft.eissn=1873-5568&rft.coden=MIENEF&rft_id=info:doi/10.1016/j.mee.2008.10.003&rft_dat=%3Cproquest_cross%3E36024584%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=36024584&rft_id=info:pmid/&rft_els_id=S0167931708004577&rfr_iscdi=true |