Novel mixed alkylamido-cyclopentadienyl precursors for ALD of ZrO2 thin films

Mixed alkylamido-cyclopentadienyl compounds of zirconium, (RCp)Zr(NMe2)3 (R = H, Me or Et) are introduced as precursors for atomic layer deposition (ALD) of high permittivity zirconium oxide thin films. Ozone was used as the oxygen source. Only slight differences were observed in the ALD growth char...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of materials chemistry 2008-11, Vol.18 (43), p.5243-5247
Hauptverfasser:	Niinisto, Jaakko, Kukli, Kaupo, Kariniemi, Maarit, Ritala, Mikko, Leskela, Markku, Blasco, Nicolas, Pinchart, Audrey, Lachaud, Christophe, Laaroussi, Nadia, Wang, Ziyun, Dussarrat, Christian
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!