Effect of Mg doping on dielectric properties of sol-gel derived (Pb0.7Sr0.3)MgxTi1–xO3–x thin film
(Pb 0.7 Sr 0.3 )Mg x Ti 1– x O 3– x ( x = 0 ∼ 0.3) thin films were successfully prepared on ITO/glass substrate by sol-gel technique. The crystalline phase structures were measured through X-ray diffraction (XRD). The dielectric properties were measured by a precision impedance analyzer. Results sh...
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| Veröffentlicht in: | Journal of electroceramics 2008-12, Vol.21 (1-4), p.128-131 |
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| container_title | Journal of electroceramics |
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| creator | Li, X. T. Huo, W. L. Weng, W. J. Han, G. R. Du, P. Y. |
| description | (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
(
x
= 0 ∼ 0.3) thin films were successfully prepared on ITO/glass substrate by sol-gel technique. The crystalline phase structures were measured through X-ray diffraction (XRD). The dielectric properties were measured by a precision impedance analyzer. Results show that the perovskite phase was stable in (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
thin film. Its lattice constant was found to decrease with the increase of
x
when
x
0.1.The crystalline phase formation and the dielectric properties of the (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
thin film depend on Mg doping content. The phase formation ability was decreased below
x
= 0.1 and then increased above
x
= 0.1 with the increase in
x
. The dielectric constant of the thin film is correspondingly changed. The tunabilities of about 35% ∼ 63% were obtained at 10 kHz. The highest tunability and the lowest dielectric loss of the thin films appeared at
x
= 0.2. The FOM of the thin film with Mg doping of
x
= 0.2 is about three times higher than that of
x
= 0.1 under applied frequency of 10 kHz. |
| doi_str_mv | 10.1007/s10832-007-9088-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_35902253</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>35902253</sourcerecordid><originalsourceid>FETCH-LOGICAL-p189t-9838deafe7304f34d1489e74507bd11c738bafb24285fe7b96c3fca2bd7961bd3</originalsourceid><addsrcrecordid>eNotkE1OwzAQhSMEEqVwAHbegGDhYsdOYi8RKj9SqyJR1pbjn2DkJsFOUdlxB27ISXBUNjNPM59Gb16WnWM0wwhVNxEjRnKYJOSIMUgPsgkuKgJZWZLDpAkrIKGUH2cnMb4jhDijeJLZubVGDaCzYNkA3fWubUDXAu2MT_PgFOhD15swOBNHKnYeNsYDbYL7NBpcPddoVr0ENCPXy2a3dvj3-2e3ImMFw5trgXV-c5odWemjOfvv0-z1fr6-e4SL1cPT3e0C9pjxAXJGmDbSmoogagnVmDJuKlqgqtYYq4qwWto6pzkrElTzUhGrZF7ripe41mSaXe7vJtMfWxMHsXFRGe9la7ptFKTgKM8LksCLf1BGJb0NslUuij64jQxfIseoxIzyxOV7LqZV25gg3rttaNMPAiMxRi_20YtRjtELSv4AdGd3YQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>35902253</pqid></control><display><type>article</type><title>Effect of Mg doping on dielectric properties of sol-gel derived (Pb0.7Sr0.3)MgxTi1–xO3–x thin film</title><source>SpringerNature Journals</source><creator>Li, X. T. ; Huo, W. L. ; Weng, W. J. ; Han, G. R. ; Du, P. Y.</creator><creatorcontrib>Li, X. T. ; Huo, W. L. ; Weng, W. J. ; Han, G. R. ; Du, P. Y.</creatorcontrib><description>(Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
(
x
= 0 ∼ 0.3) thin films were successfully prepared on ITO/glass substrate by sol-gel technique. The crystalline phase structures were measured through X-ray diffraction (XRD). The dielectric properties were measured by a precision impedance analyzer. Results show that the perovskite phase was stable in (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
thin film. Its lattice constant was found to decrease with the increase of
x
when
x
< 0.1 and increase when
x
> 0.1.The crystalline phase formation and the dielectric properties of the (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
thin film depend on Mg doping content. The phase formation ability was decreased below
x
= 0.1 and then increased above
x
= 0.1 with the increase in
x
. The dielectric constant of the thin film is correspondingly changed. The tunabilities of about 35% ∼ 63% were obtained at 10 kHz. The highest tunability and the lowest dielectric loss of the thin films appeared at
x
= 0.2. The FOM of the thin film with Mg doping of
x
= 0.2 is about three times higher than that of
x
= 0.1 under applied frequency of 10 kHz.</description><identifier>ISSN: 1385-3449</identifier><identifier>EISSN: 1573-8663</identifier><identifier>DOI: 10.1007/s10832-007-9088-4</identifier><identifier>CODEN: JOELFJ</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Ceramics ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Composites ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Crystallography and Scattering Methods ; Dielectric loss and relaxation ; Dielectric properties of solids and liquids ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Electrochemistry ; Exact sciences and technology ; Glass ; Materials Science ; Natural Materials ; Optical and Electronic Materials ; Permittivity (dielectric function) ; Physics</subject><ispartof>Journal of electroceramics, 2008-12, Vol.21 (1-4), p.128-131</ispartof><rights>Springer Science+Business Media, LLC 2007</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10832-007-9088-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10832-007-9088-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925,41488,42557,51319</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21061849$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, X. T.</creatorcontrib><creatorcontrib>Huo, W. L.</creatorcontrib><creatorcontrib>Weng, W. J.</creatorcontrib><creatorcontrib>Han, G. R.</creatorcontrib><creatorcontrib>Du, P. Y.</creatorcontrib><title>Effect of Mg doping on dielectric properties of sol-gel derived (Pb0.7Sr0.3)MgxTi1–xO3–x thin film</title><title>Journal of electroceramics</title><addtitle>J Electroceram</addtitle><description>(Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
(
x
= 0 ∼ 0.3) thin films were successfully prepared on ITO/glass substrate by sol-gel technique. The crystalline phase structures were measured through X-ray diffraction (XRD). The dielectric properties were measured by a precision impedance analyzer. Results show that the perovskite phase was stable in (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
thin film. Its lattice constant was found to decrease with the increase of
x
when
x
< 0.1 and increase when
x
> 0.1.The crystalline phase formation and the dielectric properties of the (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
thin film depend on Mg doping content. The phase formation ability was decreased below
x
= 0.1 and then increased above
x
= 0.1 with the increase in
x
. The dielectric constant of the thin film is correspondingly changed. The tunabilities of about 35% ∼ 63% were obtained at 10 kHz. The highest tunability and the lowest dielectric loss of the thin films appeared at
x
= 0.2. The FOM of the thin film with Mg doping of
x
= 0.2 is about three times higher than that of
x
= 0.1 under applied frequency of 10 kHz.</description><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Composites</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Crystallography and Scattering Methods</subject><subject>Dielectric loss and relaxation</subject><subject>Dielectric properties of solids and liquids</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Electrochemistry</subject><subject>Exact sciences and technology</subject><subject>Glass</subject><subject>Materials Science</subject><subject>Natural Materials</subject><subject>Optical and Electronic Materials</subject><subject>Permittivity (dielectric function)</subject><subject>Physics</subject><issn>1385-3449</issn><issn>1573-8663</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkE1OwzAQhSMEEqVwAHbegGDhYsdOYi8RKj9SqyJR1pbjn2DkJsFOUdlxB27ISXBUNjNPM59Gb16WnWM0wwhVNxEjRnKYJOSIMUgPsgkuKgJZWZLDpAkrIKGUH2cnMb4jhDijeJLZubVGDaCzYNkA3fWubUDXAu2MT_PgFOhD15swOBNHKnYeNsYDbYL7NBpcPddoVr0ENCPXy2a3dvj3-2e3ImMFw5trgXV-c5odWemjOfvv0-z1fr6-e4SL1cPT3e0C9pjxAXJGmDbSmoogagnVmDJuKlqgqtYYq4qwWto6pzkrElTzUhGrZF7ripe41mSaXe7vJtMfWxMHsXFRGe9la7ptFKTgKM8LksCLf1BGJb0NslUuij64jQxfIseoxIzyxOV7LqZV25gg3rttaNMPAiMxRi_20YtRjtELSv4AdGd3YQ</recordid><startdate>20081201</startdate><enddate>20081201</enddate><creator>Li, X. T.</creator><creator>Huo, W. L.</creator><creator>Weng, W. J.</creator><creator>Han, G. R.</creator><creator>Du, P. Y.</creator><general>Springer US</general><general>Springer</general><scope>IQODW</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20081201</creationdate><title>Effect of Mg doping on dielectric properties of sol-gel derived (Pb0.7Sr0.3)MgxTi1–xO3–x thin film</title><author>Li, X. T. ; Huo, W. L. ; Weng, W. J. ; Han, G. R. ; Du, P. Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p189t-9838deafe7304f34d1489e74507bd11c738bafb24285fe7b96c3fca2bd7961bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Composites</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Crystallography and Scattering Methods</topic><topic>Dielectric loss and relaxation</topic><topic>Dielectric properties of solids and liquids</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Electrochemistry</topic><topic>Exact sciences and technology</topic><topic>Glass</topic><topic>Materials Science</topic><topic>Natural Materials</topic><topic>Optical and Electronic Materials</topic><topic>Permittivity (dielectric function)</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, X. T.</creatorcontrib><creatorcontrib>Huo, W. L.</creatorcontrib><creatorcontrib>Weng, W. J.</creatorcontrib><creatorcontrib>Han, G. R.</creatorcontrib><creatorcontrib>Du, P. Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of electroceramics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, X. T.</au><au>Huo, W. L.</au><au>Weng, W. J.</au><au>Han, G. R.</au><au>Du, P. Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Mg doping on dielectric properties of sol-gel derived (Pb0.7Sr0.3)MgxTi1–xO3–x thin film</atitle><jtitle>Journal of electroceramics</jtitle><stitle>J Electroceram</stitle><date>2008-12-01</date><risdate>2008</risdate><volume>21</volume><issue>1-4</issue><spage>128</spage><epage>131</epage><pages>128-131</pages><issn>1385-3449</issn><eissn>1573-8663</eissn><coden>JOELFJ</coden><abstract>(Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
(
x
= 0 ∼ 0.3) thin films were successfully prepared on ITO/glass substrate by sol-gel technique. The crystalline phase structures were measured through X-ray diffraction (XRD). The dielectric properties were measured by a precision impedance analyzer. Results show that the perovskite phase was stable in (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
thin film. Its lattice constant was found to decrease with the increase of
x
when
x
< 0.1 and increase when
x
> 0.1.The crystalline phase formation and the dielectric properties of the (Pb
0.7
Sr
0.3
)Mg
x
Ti
1–
x
O
3–
x
thin film depend on Mg doping content. The phase formation ability was decreased below
x
= 0.1 and then increased above
x
= 0.1 with the increase in
x
. The dielectric constant of the thin film is correspondingly changed. The tunabilities of about 35% ∼ 63% were obtained at 10 kHz. The highest tunability and the lowest dielectric loss of the thin films appeared at
x
= 0.2. The FOM of the thin film with Mg doping of
x
= 0.2 is about three times higher than that of
x
= 0.1 under applied frequency of 10 kHz.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10832-007-9088-4</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1385-3449 |
| ispartof | Journal of electroceramics, 2008-12, Vol.21 (1-4), p.128-131 |
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| source | SpringerNature Journals |
| subjects | Ceramics Characterization and Evaluation of Materials Chemistry and Materials Science Composites Condensed matter: electronic structure, electrical, magnetic, and optical properties Crystallography and Scattering Methods Dielectric loss and relaxation Dielectric properties of solids and liquids Dielectrics, piezoelectrics, and ferroelectrics and their properties Electrochemistry Exact sciences and technology Glass Materials Science Natural Materials Optical and Electronic Materials Permittivity (dielectric function) Physics |
| title | Effect of Mg doping on dielectric properties of sol-gel derived (Pb0.7Sr0.3)MgxTi1–xO3–x thin film |
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