Microstructure and electrical characteristics of Ba0.65Sr0.35TiO3 thin films etched in CF4/Ar/O2 plasma
Radio frequency magnetron sputtered Ba0.65Sr0.35TiO3 (BST) thin films were etched in CF4/Ar/O2 plasma by magnetically enhanced reactive ion etching technique. The etching characteristics of BST films were characterized in terms of microstructure and electrical properties. Atomic force microscopy and...
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Veröffentlicht in: | Microelectronic engineering 2008-11, Vol.85 (11), p.2269-2275 |
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Format: | Artikel |
Sprache: | eng |
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