Microstructure and electrical characteristics of Ba0.65Sr0.35TiO3 thin films etched in CF4/Ar/O2 plasma

Radio frequency magnetron sputtered Ba0.65Sr0.35TiO3 (BST) thin films were etched in CF4/Ar/O2 plasma by magnetically enhanced reactive ion etching technique. The etching characteristics of BST films were characterized in terms of microstructure and electrical properties. Atomic force microscopy and...

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Veröffentlicht in:Microelectronic engineering 2008-11, Vol.85 (11), p.2269-2275
Hauptverfasser: ZUCI QUAN, SHENG XU, HAO HU, WEI LIU, HUIMING HUANG, SEBO, Bobby, GUOJIA FANG, MEIYA LI, XINGZHONG ZHAO
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Sprache:eng
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