Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method
Electrodeposition of metallic multilayers on Si is normally preceded by the vapour deposition of a metallic layer. Since vapour deposition produces an additional step in the production process, direct electrodeposition of multilayers on Si is desirable. However, direct electrodeposition on Si has re...
Gespeichert in:
| Veröffentlicht in: | Electrochimica acta 2008-12, Vol.54 (2), p.430-433 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 433 |
|---|---|
| container_issue | 2 |
| container_start_page | 430 |
| container_title | Electrochimica acta |
| container_volume | 54 |
| creator | Pradhan, Debabrata Sripadmini, Thamminana Pradhan, Pradeep Katiyar, M. Shekhar, R. |
| description | Electrodeposition of metallic multilayers on Si is normally preceded by the vapour deposition of a metallic layer. Since vapour deposition produces an additional step in the production process, direct electrodeposition of multilayers on Si is desirable. However, direct electrodeposition on Si has resulted in low magnetoresistance (MR) – of the order of 1% – at room temperature. With the use of (i) electroless plated copper back contact, (ii) composite potentiostatic pulses, (iii) horizontal electrode configuration and (iv) non-continuous mode of deposition, a room temperature MR of 5.8% has been achieved. |
| doi_str_mv | 10.1016/j.electacta.2008.07.065 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35769193</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0013468608009493</els_id><sourcerecordid>35769193</sourcerecordid><originalsourceid>FETCH-LOGICAL-c376t-abc48dce815bd2681543bef219ffb185ecefe57f0e5621e0175fca6badd5717b3</originalsourceid><addsrcrecordid>eNqFkc9q3DAQxkVJoZu0z1Bd2pudkb2S7GNY0rQQyCHtWcjSKNEiW1vJLuzD9F2j3c2fY2BgYPh93zDzEfKVQc2AicttjQHNrEvVDUBXg6xB8A9kxTrZVm3H-zOyAmBttRad-ETOc94CgBQSVuT_tXNFTaOjR5sULVITJ-cflqRnHyeqJ0vHw7gwFncx--O41KgfJpxjwuzzrCeD1E9vNkcSLd3Ey81CxyXMPug9pnyQTtW9p8OeauqWEPYvKvOIozc60BHnx2g_k49Oh4xfnvsF-fPj-vfmZ3V7d_Nrc3VbmVaKudKDWXfWYMf4YBtR2rod0DWsd25gHUeDDrl0gFw0DIFJ7owWg7aWSyaH9oJ8P_nuUvy7YJ7V6LPBEPSEccmq5VL0rG8LKE-gSTHnhE7tkh912isG6hCH2qrXONQhDgVSlTiK8tvzCp3LgS6Vf_n8Km-gE33fiMJdnTgs9_7zmFQ2HstvrU_FV9no3931BEwHqfQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>35769193</pqid></control><display><type>article</type><title>Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Pradhan, Debabrata ; Sripadmini, Thamminana ; Pradhan, Pradeep ; Katiyar, M. ; Shekhar, R.</creator><creatorcontrib>Pradhan, Debabrata ; Sripadmini, Thamminana ; Pradhan, Pradeep ; Katiyar, M. ; Shekhar, R.</creatorcontrib><description>Electrodeposition of metallic multilayers on Si is normally preceded by the vapour deposition of a metallic layer. Since vapour deposition produces an additional step in the production process, direct electrodeposition of multilayers on Si is desirable. However, direct electrodeposition on Si has resulted in low magnetoresistance (MR) – of the order of 1% – at room temperature. With the use of (i) electroless plated copper back contact, (ii) composite potentiostatic pulses, (iii) horizontal electrode configuration and (iv) non-continuous mode of deposition, a room temperature MR of 5.8% has been achieved.</description><identifier>ISSN: 0013-4686</identifier><identifier>EISSN: 1873-3859</identifier><identifier>DOI: 10.1016/j.electacta.2008.07.065</identifier><identifier>CODEN: ELCAAV</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Chemistry ; Composite pulse ; Electrochemistry ; Electrodeposition ; Exact sciences and technology ; General and physical chemistry ; Magnetoresistance ; Metallic multilayers ; Silicon ; Study of interfaces</subject><ispartof>Electrochimica acta, 2008-12, Vol.54 (2), p.430-433</ispartof><rights>2008 Elsevier Ltd</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-abc48dce815bd2681543bef219ffb185ecefe57f0e5621e0175fca6badd5717b3</citedby><cites>FETCH-LOGICAL-c376t-abc48dce815bd2681543bef219ffb185ecefe57f0e5621e0175fca6badd5717b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.electacta.2008.07.065$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20869926$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pradhan, Debabrata</creatorcontrib><creatorcontrib>Sripadmini, Thamminana</creatorcontrib><creatorcontrib>Pradhan, Pradeep</creatorcontrib><creatorcontrib>Katiyar, M.</creatorcontrib><creatorcontrib>Shekhar, R.</creatorcontrib><title>Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method</title><title>Electrochimica acta</title><description>Electrodeposition of metallic multilayers on Si is normally preceded by the vapour deposition of a metallic layer. Since vapour deposition produces an additional step in the production process, direct electrodeposition of multilayers on Si is desirable. However, direct electrodeposition on Si has resulted in low magnetoresistance (MR) – of the order of 1% – at room temperature. With the use of (i) electroless plated copper back contact, (ii) composite potentiostatic pulses, (iii) horizontal electrode configuration and (iv) non-continuous mode of deposition, a room temperature MR of 5.8% has been achieved.</description><subject>Chemistry</subject><subject>Composite pulse</subject><subject>Electrochemistry</subject><subject>Electrodeposition</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Magnetoresistance</subject><subject>Metallic multilayers</subject><subject>Silicon</subject><subject>Study of interfaces</subject><issn>0013-4686</issn><issn>1873-3859</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkc9q3DAQxkVJoZu0z1Bd2pudkb2S7GNY0rQQyCHtWcjSKNEiW1vJLuzD9F2j3c2fY2BgYPh93zDzEfKVQc2AicttjQHNrEvVDUBXg6xB8A9kxTrZVm3H-zOyAmBttRad-ETOc94CgBQSVuT_tXNFTaOjR5sULVITJ-cflqRnHyeqJ0vHw7gwFncx--O41KgfJpxjwuzzrCeD1E9vNkcSLd3Ey81CxyXMPug9pnyQTtW9p8OeauqWEPYvKvOIozc60BHnx2g_k49Oh4xfnvsF-fPj-vfmZ3V7d_Nrc3VbmVaKudKDWXfWYMf4YBtR2rod0DWsd25gHUeDDrl0gFw0DIFJ7owWg7aWSyaH9oJ8P_nuUvy7YJ7V6LPBEPSEccmq5VL0rG8LKE-gSTHnhE7tkh912isG6hCH2qrXONQhDgVSlTiK8tvzCp3LgS6Vf_n8Km-gE33fiMJdnTgs9_7zmFQ2HstvrU_FV9no3931BEwHqfQ</recordid><startdate>20081230</startdate><enddate>20081230</enddate><creator>Pradhan, Debabrata</creator><creator>Sripadmini, Thamminana</creator><creator>Pradhan, Pradeep</creator><creator>Katiyar, M.</creator><creator>Shekhar, R.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20081230</creationdate><title>Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method</title><author>Pradhan, Debabrata ; Sripadmini, Thamminana ; Pradhan, Pradeep ; Katiyar, M. ; Shekhar, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c376t-abc48dce815bd2681543bef219ffb185ecefe57f0e5621e0175fca6badd5717b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Chemistry</topic><topic>Composite pulse</topic><topic>Electrochemistry</topic><topic>Electrodeposition</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Magnetoresistance</topic><topic>Metallic multilayers</topic><topic>Silicon</topic><topic>Study of interfaces</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pradhan, Debabrata</creatorcontrib><creatorcontrib>Sripadmini, Thamminana</creatorcontrib><creatorcontrib>Pradhan, Pradeep</creatorcontrib><creatorcontrib>Katiyar, M.</creatorcontrib><creatorcontrib>Shekhar, R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electrochimica acta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pradhan, Debabrata</au><au>Sripadmini, Thamminana</au><au>Pradhan, Pradeep</au><au>Katiyar, M.</au><au>Shekhar, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method</atitle><jtitle>Electrochimica acta</jtitle><date>2008-12-30</date><risdate>2008</risdate><volume>54</volume><issue>2</issue><spage>430</spage><epage>433</epage><pages>430-433</pages><issn>0013-4686</issn><eissn>1873-3859</eissn><coden>ELCAAV</coden><abstract>Electrodeposition of metallic multilayers on Si is normally preceded by the vapour deposition of a metallic layer. Since vapour deposition produces an additional step in the production process, direct electrodeposition of multilayers on Si is desirable. However, direct electrodeposition on Si has resulted in low magnetoresistance (MR) – of the order of 1% – at room temperature. With the use of (i) electroless plated copper back contact, (ii) composite potentiostatic pulses, (iii) horizontal electrode configuration and (iv) non-continuous mode of deposition, a room temperature MR of 5.8% has been achieved.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.electacta.2008.07.065</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0013-4686 |
| ispartof | Electrochimica acta, 2008-12, Vol.54 (2), p.430-433 |
| issn | 0013-4686 1873-3859 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35769193 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Chemistry Composite pulse Electrochemistry Electrodeposition Exact sciences and technology General and physical chemistry Magnetoresistance Metallic multilayers Silicon Study of interfaces |
| title | Effect of electrode configuration and mode of deposition on magnetoresistance in electrodeposited Co/Cu multilayers on n-Si by a fully electrochemical method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T05%3A06%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20electrode%20configuration%20and%20mode%20of%20deposition%20on%20magnetoresistance%20in%20electrodeposited%20Co/Cu%20multilayers%20on%20n-Si%20by%20a%20fully%20electrochemical%20method&rft.jtitle=Electrochimica%20acta&rft.au=Pradhan,%20Debabrata&rft.date=2008-12-30&rft.volume=54&rft.issue=2&rft.spage=430&rft.epage=433&rft.pages=430-433&rft.issn=0013-4686&rft.eissn=1873-3859&rft.coden=ELCAAV&rft_id=info:doi/10.1016/j.electacta.2008.07.065&rft_dat=%3Cproquest_cross%3E35769193%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35769193&rft_id=info:pmid/&rft_els_id=S0013468608009493&rfr_iscdi=true |