The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure

The effect of ohmic contact location on the buffer leakage current of AlGaN/GaN heterostructure was investigated and the AlGaN/GaN HEMT employing the proposed ohmic contact pattern was fabricated. We have fabricated 3 different types of ohmic patterns; type A - both contacts are on the etched GaN bu...

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Bibliographische Detailangaben

Hauptverfasser:	Han, Min Koo, Cho, Kyu Heon, Ji, In Hwan, Lim, Ji Yong, Choi, Young Hwan
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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