The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
The effect of ohmic contact location on the buffer leakage current of AlGaN/GaN heterostructure was investigated and the AlGaN/GaN HEMT employing the proposed ohmic contact pattern was fabricated. We have fabricated 3 different types of ohmic patterns; type A - both contacts are on the etched GaN bu...
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| creator | Han, Min Koo Cho, Kyu Heon Ji, In Hwan Lim, Ji Yong Choi, Young Hwan |
| description | The effect of ohmic contact location on the buffer leakage current of AlGaN/GaN
heterostructure was investigated and the AlGaN/GaN HEMT employing the proposed ohmic
contact pattern was fabricated. We have fabricated 3 different types of ohmic patterns; type A - both
contacts are on the etched GaN buffer layer, type B - one is on the etched GaN buffer layer and the
other is on the unetched GaN cap layer and type C - both contacts are on the unetched GaN cap
layer. Our experimental results showed that the ohmic contact on GaN buffer increased the buffer
leakage current due to the lateral diffusion of ohmic metals. The proposed AlGaN/GaN HEMT
successfully decreased the leakage current and did not affect the forward drain current and the
transconductance. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.600-603.1337 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35706686</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>35706686</sourcerecordid><originalsourceid>FETCH-LOGICAL-c378t-17428a79dd3d3a2ecbe341343c4b433bce7d77c5babd8afbf148bf131932c88c3</originalsourceid><addsrcrecordid>eNqVkN9LwzAQx4MoOKf_Q598kXZJr02yx1nmJkz34HwOaXp1nV07k5Thf2_GBJ-F-wHH977cfQh5YDTJaConx-MxcabBzjd1Y5IO_eTl7SnhlMacQsIAxAUZMc7TeCry9JKMaJrncZ4Jfk1unNtRCkwyPiJqs8VoXtdofNTX0Xq7b0xU9J3XYbDqjfZN30UhfNA9DkFooxXqT_2BUTFYG0447c3ahX6dhIyW6NH2ztvB-MHiLbmqdevw7rePyfvTfFMs49V68VzMVrEBIX3MRJZKLaZVBRXoFE2JkDHIwGRlBlAaFJUQJi91WUldlzXLZCjAppAaKQ2Myf3Z92D7rwGdV_vGGWxb3WE_OAW5oJxLHoTFWWjClc5irQ622Wv7rRhVJ7gqwFV_cFWAqwJcFeCGBHWCG1zmZxdvdec8mq3a9YPtwov_8vkBY7aN-Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>35706686</pqid></control><display><type>conference_proceeding</type><title>The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure</title><source>Scientific.net Journals</source><creator>Han, Min Koo ; Cho, Kyu Heon ; Ji, In Hwan ; Lim, Ji Yong ; Choi, Young Hwan</creator><creatorcontrib>Han, Min Koo ; Cho, Kyu Heon ; Ji, In Hwan ; Lim, Ji Yong ; Choi, Young Hwan</creatorcontrib><description>The effect of ohmic contact location on the buffer leakage current of AlGaN/GaN
heterostructure was investigated and the AlGaN/GaN HEMT employing the proposed ohmic
contact pattern was fabricated. We have fabricated 3 different types of ohmic patterns; type A - both
contacts are on the etched GaN buffer layer, type B - one is on the etched GaN buffer layer and the
other is on the unetched GaN cap layer and type C - both contacts are on the unetched GaN cap
layer. Our experimental results showed that the ohmic contact on GaN buffer increased the buffer
leakage current due to the lateral diffusion of ohmic metals. The proposed AlGaN/GaN HEMT
successfully decreased the leakage current and did not affect the forward drain current and the
transconductance.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.600-603.1337</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2009, Vol.600-603, p.1337-1340</ispartof><rights>2009 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/768?width=600</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids></links><search><creatorcontrib>Han, Min Koo</creatorcontrib><creatorcontrib>Cho, Kyu Heon</creatorcontrib><creatorcontrib>Ji, In Hwan</creatorcontrib><creatorcontrib>Lim, Ji Yong</creatorcontrib><creatorcontrib>Choi, Young Hwan</creatorcontrib><title>The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure</title><title>Materials science forum</title><description>The effect of ohmic contact location on the buffer leakage current of AlGaN/GaN
heterostructure was investigated and the AlGaN/GaN HEMT employing the proposed ohmic
contact pattern was fabricated. We have fabricated 3 different types of ohmic patterns; type A - both
contacts are on the etched GaN buffer layer, type B - one is on the etched GaN buffer layer and the
other is on the unetched GaN cap layer and type C - both contacts are on the unetched GaN cap
layer. Our experimental results showed that the ohmic contact on GaN buffer increased the buffer
leakage current due to the lateral diffusion of ohmic metals. The proposed AlGaN/GaN HEMT
successfully decreased the leakage current and did not affect the forward drain current and the
transconductance.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqVkN9LwzAQx4MoOKf_Q598kXZJr02yx1nmJkz34HwOaXp1nV07k5Thf2_GBJ-F-wHH977cfQh5YDTJaConx-MxcabBzjd1Y5IO_eTl7SnhlMacQsIAxAUZMc7TeCry9JKMaJrncZ4Jfk1unNtRCkwyPiJqs8VoXtdofNTX0Xq7b0xU9J3XYbDqjfZN30UhfNA9DkFooxXqT_2BUTFYG0447c3ahX6dhIyW6NH2ztvB-MHiLbmqdevw7rePyfvTfFMs49V68VzMVrEBIX3MRJZKLaZVBRXoFE2JkDHIwGRlBlAaFJUQJi91WUldlzXLZCjAppAaKQ2Myf3Z92D7rwGdV_vGGWxb3WE_OAW5oJxLHoTFWWjClc5irQ622Wv7rRhVJ7gqwFV_cFWAqwJcFeCGBHWCG1zmZxdvdec8mq3a9YPtwov_8vkBY7aN-Q</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Han, Min Koo</creator><creator>Cho, Kyu Heon</creator><creator>Ji, In Hwan</creator><creator>Lim, Ji Yong</creator><creator>Choi, Young Hwan</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090101</creationdate><title>The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure</title><author>Han, Min Koo ; Cho, Kyu Heon ; Ji, In Hwan ; Lim, Ji Yong ; Choi, Young Hwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-17428a79dd3d3a2ecbe341343c4b433bce7d77c5babd8afbf148bf131932c88c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han, Min Koo</creatorcontrib><creatorcontrib>Cho, Kyu Heon</creatorcontrib><creatorcontrib>Ji, In Hwan</creatorcontrib><creatorcontrib>Lim, Ji Yong</creatorcontrib><creatorcontrib>Choi, Young Hwan</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Han, Min Koo</au><au>Cho, Kyu Heon</au><au>Ji, In Hwan</au><au>Lim, Ji Yong</au><au>Choi, Young Hwan</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure</atitle><btitle>Materials science forum</btitle><date>2009-01-01</date><risdate>2009</risdate><volume>600-603</volume><spage>1337</spage><epage>1340</epage><pages>1337-1340</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>The effect of ohmic contact location on the buffer leakage current of AlGaN/GaN
heterostructure was investigated and the AlGaN/GaN HEMT employing the proposed ohmic
contact pattern was fabricated. We have fabricated 3 different types of ohmic patterns; type A - both
contacts are on the etched GaN buffer layer, type B - one is on the etched GaN buffer layer and the
other is on the unetched GaN cap layer and type C - both contacts are on the unetched GaN cap
layer. Our experimental results showed that the ohmic contact on GaN buffer increased the buffer
leakage current due to the lateral diffusion of ohmic metals. The proposed AlGaN/GaN HEMT
successfully decreased the leakage current and did not affect the forward drain current and the
transconductance.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.600-603.1337</doi><tpages>4</tpages></addata></record> |
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| ispartof | Materials science forum, 2009, Vol.600-603, p.1337-1340 |
| issn | 0255-5476 1662-9752 1662-9752 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35706686 |
| source | Scientific.net Journals |
| title | The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T00%3A07%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=The%20Effect%20of%20Ohmic%20Contact%20Location%20on%20the%20Buffer%20Leakage%20Current%20of%20AlGaN/GaN%20Heterostructure&rft.btitle=Materials%20science%20forum&rft.au=Han,%20Min%20Koo&rft.date=2009-01-01&rft.volume=600-603&rft.spage=1337&rft.epage=1340&rft.pages=1337-1340&rft.issn=0255-5476&rft.eissn=1662-9752&rft_id=info:doi/10.4028/www.scientific.net/MSF.600-603.1337&rft_dat=%3Cproquest_cross%3E35706686%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35706686&rft_id=info:pmid/&rfr_iscdi=true |