TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition

The reliability of CVD gate oxide was investigated by CCS-TDDB measurement and compared with thermally grown gate oxide. Although the QBD of thermal oxide becomes smaller for the larger oxide area, the QBD of CVD oxide is almost independent of the investigated gate oxide area. The QBD at F = 50% of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2009-01, Vol.600-603, p.799-802
Hauptverfasser:	Takami, Tetsuya, Imaizumi, Masayuki, Fujihira, Keiko, Yoshida, Shohei, Oomori, Tatsuo, Miura, Naruhisa, Nakao, Yukiyasu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!