Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to. If a large current is applied, a reversible resistance ch...
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| Veröffentlicht in: | Journal of magnetism and magnetic materials 2009-02, Vol.321 (3), p.144-147 |
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| container_issue | 3 |
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| container_title | Journal of magnetism and magnetic materials |
| container_volume | 321 |
| creator | KRZYSTECZKO, Patryk XINLI KOU ROTT, Karsten THOMAS, Andy REISS, Günter |
| description | Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to. If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena. |
| doi_str_mv | 10.1016/j.jmmm.2008.08.088 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35697196</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>35697196</sourcerecordid><originalsourceid>FETCH-LOGICAL-c308t-64a7d01bd279990ec02ad7d6694adaa4eece913ae1f33d4f01b7dbe5c8a75c243</originalsourceid><addsrcrecordid>eNo9kLlOxDAURV2AxLD8AJUb6BLsOItTohGbNGgaqK0X-2XGUeIMtiPE35NZQLrSbc69xSHklrOUM14-dGk3DEOaMSbTQ-QZWTDB8kTKQlyQyxA6xhjPZbkgzXLyHl2k1plJo6Eegw0RnEaqt-A2SMeWDrBxGK2mcXIOe9pNTkc7ukC_bdzSqY8ekri1jr5v1n9QA95b9OGanLfQB7w59RX5fH76WL4mq_XL2_JxlWjBZEzKHCrDeGOyqq5rhpplYCpTlnUOBiBH1FhzAchbIUzezmhlGiy0hKrQWS6uyP3xd-fHrwlDVIMNGvseHI5TUKIo64rX5QxmR1D7MQSPrdp5O4D_UZypvULVqb1CtVeoDpHz6O70DkFD3_pZkQ3_y2xm6oxX4hfCCneZ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>35697196</pqid></control><display><type>article</type><title>Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>KRZYSTECZKO, Patryk ; XINLI KOU ; ROTT, Karsten ; THOMAS, Andy ; REISS, Günter</creator><creatorcontrib>KRZYSTECZKO, Patryk ; XINLI KOU ; ROTT, Karsten ; THOMAS, Andy ; REISS, Günter</creatorcontrib><description>Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to. If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.</description><identifier>ISSN: 0304-8853</identifier><identifier>DOI: 10.1016/j.jmmm.2008.08.088</identifier><identifier>CODEN: JMMMDC</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic transport in condensed matter ; Exact sciences and technology ; Physics ; Spin polarized transport</subject><ispartof>Journal of magnetism and magnetic materials, 2009-02, Vol.321 (3), p.144-147</ispartof><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c308t-64a7d01bd279990ec02ad7d6694adaa4eece913ae1f33d4f01b7dbe5c8a75c243</citedby><cites>FETCH-LOGICAL-c308t-64a7d01bd279990ec02ad7d6694adaa4eece913ae1f33d4f01b7dbe5c8a75c243</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20889217$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KRZYSTECZKO, Patryk</creatorcontrib><creatorcontrib>XINLI KOU</creatorcontrib><creatorcontrib>ROTT, Karsten</creatorcontrib><creatorcontrib>THOMAS, Andy</creatorcontrib><creatorcontrib>REISS, Günter</creatorcontrib><title>Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers</title><title>Journal of magnetism and magnetic materials</title><description>Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to. If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Spin polarized transport</subject><issn>0304-8853</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNo9kLlOxDAURV2AxLD8AJUb6BLsOItTohGbNGgaqK0X-2XGUeIMtiPE35NZQLrSbc69xSHklrOUM14-dGk3DEOaMSbTQ-QZWTDB8kTKQlyQyxA6xhjPZbkgzXLyHl2k1plJo6Eegw0RnEaqt-A2SMeWDrBxGK2mcXIOe9pNTkc7ukC_bdzSqY8ekri1jr5v1n9QA95b9OGanLfQB7w59RX5fH76WL4mq_XL2_JxlWjBZEzKHCrDeGOyqq5rhpplYCpTlnUOBiBH1FhzAchbIUzezmhlGiy0hKrQWS6uyP3xd-fHrwlDVIMNGvseHI5TUKIo64rX5QxmR1D7MQSPrdp5O4D_UZypvULVqb1CtVeoDpHz6O70DkFD3_pZkQ3_y2xm6oxX4hfCCneZ</recordid><startdate>20090201</startdate><enddate>20090201</enddate><creator>KRZYSTECZKO, Patryk</creator><creator>XINLI KOU</creator><creator>ROTT, Karsten</creator><creator>THOMAS, Andy</creator><creator>REISS, Günter</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090201</creationdate><title>Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers</title><author>KRZYSTECZKO, Patryk ; XINLI KOU ; ROTT, Karsten ; THOMAS, Andy ; REISS, Günter</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c308t-64a7d01bd279990ec02ad7d6694adaa4eece913ae1f33d4f01b7dbe5c8a75c243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Spin polarized transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KRZYSTECZKO, Patryk</creatorcontrib><creatorcontrib>XINLI KOU</creatorcontrib><creatorcontrib>ROTT, Karsten</creatorcontrib><creatorcontrib>THOMAS, Andy</creatorcontrib><creatorcontrib>REISS, Günter</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of magnetism and magnetic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KRZYSTECZKO, Patryk</au><au>XINLI KOU</au><au>ROTT, Karsten</au><au>THOMAS, Andy</au><au>REISS, Günter</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers</atitle><jtitle>Journal of magnetism and magnetic materials</jtitle><date>2009-02-01</date><risdate>2009</risdate><volume>321</volume><issue>3</issue><spage>144</spage><epage>147</epage><pages>144-147</pages><issn>0304-8853</issn><coden>JMMMDC</coden><abstract>Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110% and an area resistance product of down to. If a large current is applied, a reversible resistance change is observed, which can be attributed to two different processes during stressing and one relaxation process afterwards. Here, we analyze the time dependence of the resistance and use a simple model to explain the observed behavior. The explanation is further supported by numerical fits to the data in order to quantify the timescales of the involved phenomena.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.jmmm.2008.08.088</doi><tpages>4</tpages></addata></record> |
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| ispartof | Journal of magnetism and magnetic materials, 2009-02, Vol.321 (3), p.144-147 |
| issn | 0304-8853 |
| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Physics Spin polarized transport |
| title | Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T17%3A31%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Current%20induced%20resistance%20change%20of%20magnetic%20tunnel%20junctions%20with%20ultra-thin%20MgO%20tunnel%20barriers&rft.jtitle=Journal%20of%20magnetism%20and%20magnetic%20materials&rft.au=KRZYSTECZKO,%20Patryk&rft.date=2009-02-01&rft.volume=321&rft.issue=3&rft.spage=144&rft.epage=147&rft.pages=144-147&rft.issn=0304-8853&rft.coden=JMMMDC&rft_id=info:doi/10.1016/j.jmmm.2008.08.088&rft_dat=%3Cproquest_cross%3E35697196%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35697196&rft_id=info:pmid/&rfr_iscdi=true |