Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell
We proposed an oxygen transport model in which the reaction between a liner made of Si 3N 4 and a crucible made of SiO 2 was taken into account to study the mechanism of oxygen incorporation in multicrystalline silicon for a solar cell grown by the unidirectional solidification method. The equilibri...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2008-11, Vol.310 (22), p.4666-4671 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4671 |
|---|---|
| container_issue | 22 |
| container_start_page | 4666 |
| container_title | Journal of crystal growth |
| container_volume | 310 |
| creator | Matsuo, Hitoshi Bairava Ganesh, R. Nakano, Satoshi Liu, Lijun Kangawa, Yoshihiro Arafune, Koji Ohshita, Yoshio Yamaguchi, Masafumi Kakimoto, Koichi |
| description | We proposed an oxygen transport model in which the reaction between a liner made of Si
3N
4 and a crucible made of SiO
2 was taken into account to study the mechanism of oxygen incorporation in multicrystalline silicon for a solar cell grown by the unidirectional solidification method. The equilibrium oxygen concentration in the case of the unidirectional solidification method was calculated by taking into account the two interfaces between a quartz crucible and a liner of Si
3N
4 and between a liner of Si
3N
4 and silicon melt. The calculated equilibrium oxygen concentration was less than half of that in the case of the Czochralski method, in which oxygen was directly dissolved from a quartz crucible into the melt. We also calculated the distribution of oxygen concentration in a silicon crystal by using numerical calculation with global modeling. The equilibrium concentrations of oxygen in the two cases were used as boundary conditions at the interface between silicon melt and quartz crucible in the numerical calculation. The results of numerical calculation by taking into account the Si
3N
4 coating were found to be close to the experimental results. From these results, we concluded that oxygen was incorporated from a quartz crucible into the melt through the coating material of Si
3N
4 during the growth process. |
| doi_str_mv | 10.1016/j.jcrysgro.2008.08.045 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35686243</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024808007768</els_id><sourcerecordid>35686243</sourcerecordid><originalsourceid>FETCH-LOGICAL-c439t-bb3f1fa02dde8b8aaba6dd7eda63cb5dd8cffbe3eff595136d37259397a93a243</originalsourceid><addsrcrecordid>eNqFkM1u1TAQhSMEEpfCKyBvYJeLHed3B6qgRarEpl1bE_9c5sqxb8cJIjxBHxuHW7qtNJrZfOfMzCmK94LvBRftp-P-qGlNB4r7ivN-v1XdvCh2ou9k2XBevSx2uVclr-r-dfEmpSPnWSn4rni4_WlpimYNMKEGzyCAXxMmFh2Lv9eDDQyDjnSKBDPGwBzFiQG7X4DmP0zTonH0lpmFMBxYih4Numz1D84m0-Jn3A6cwXsMliX0qDejSBsOxLT1_m3xyoFP9t3jvCjuvn29vbwub35cfb_8clPqWg5zOY7SCQe8Msb2Yw8wQmtMZw20Uo-NMb12brTSOtcMjZCtkV3VDHLoYJBQ1fKi-Hj2PVG8X2ya1YRpOwCCjUtSsmn7NnMZbM-gppgSWadOhBPQqgRXW_DqqP4Hr7bg1VZ1k4UfHjdAyok6gqAxPakrPohKdEPmPp85m9_9hZZU0miDtgbJ6lmZiM-t-gvccKNJ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>35686243</pqid></control><display><type>article</type><title>Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Matsuo, Hitoshi ; Bairava Ganesh, R. ; Nakano, Satoshi ; Liu, Lijun ; Kangawa, Yoshihiro ; Arafune, Koji ; Ohshita, Yoshio ; Yamaguchi, Masafumi ; Kakimoto, Koichi</creator><creatorcontrib>Matsuo, Hitoshi ; Bairava Ganesh, R. ; Nakano, Satoshi ; Liu, Lijun ; Kangawa, Yoshihiro ; Arafune, Koji ; Ohshita, Yoshio ; Yamaguchi, Masafumi ; Kakimoto, Koichi</creatorcontrib><description>We proposed an oxygen transport model in which the reaction between a liner made of Si
3N
4 and a crucible made of SiO
2 was taken into account to study the mechanism of oxygen incorporation in multicrystalline silicon for a solar cell grown by the unidirectional solidification method. The equilibrium oxygen concentration in the case of the unidirectional solidification method was calculated by taking into account the two interfaces between a quartz crucible and a liner of Si
3N
4 and between a liner of Si
3N
4 and silicon melt. The calculated equilibrium oxygen concentration was less than half of that in the case of the Czochralski method, in which oxygen was directly dissolved from a quartz crucible into the melt. We also calculated the distribution of oxygen concentration in a silicon crystal by using numerical calculation with global modeling. The equilibrium concentrations of oxygen in the two cases were used as boundary conditions at the interface between silicon melt and quartz crucible in the numerical calculation. The results of numerical calculation by taking into account the Si
3N
4 coating were found to be close to the experimental results. From these results, we concluded that oxygen was incorporated from a quartz crucible into the melt through the coating material of Si
3N
4 during the growth process.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.08.045</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Directional solidification ; A1. Impurities ; Applied sciences ; B2. Semiconducting silicon ; B3. Solar cells ; Cross-disciplinary physics: materials science; rheology ; Energy ; Exact sciences and technology ; Growth from melts; zone melting and refining ; Materials science ; Methods of crystal growth; physics of crystal growth ; Natural energy ; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations ; Photovoltaic conversion ; Physics ; Solar cells. Photoelectrochemical cells ; Solar energy ; Solidification ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2008-11, Vol.310 (22), p.4666-4671</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-bb3f1fa02dde8b8aaba6dd7eda63cb5dd8cffbe3eff595136d37259397a93a243</citedby><cites>FETCH-LOGICAL-c439t-bb3f1fa02dde8b8aaba6dd7eda63cb5dd8cffbe3eff595136d37259397a93a243</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2008.08.045$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20912179$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Matsuo, Hitoshi</creatorcontrib><creatorcontrib>Bairava Ganesh, R.</creatorcontrib><creatorcontrib>Nakano, Satoshi</creatorcontrib><creatorcontrib>Liu, Lijun</creatorcontrib><creatorcontrib>Kangawa, Yoshihiro</creatorcontrib><creatorcontrib>Arafune, Koji</creatorcontrib><creatorcontrib>Ohshita, Yoshio</creatorcontrib><creatorcontrib>Yamaguchi, Masafumi</creatorcontrib><creatorcontrib>Kakimoto, Koichi</creatorcontrib><title>Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell</title><title>Journal of crystal growth</title><description>We proposed an oxygen transport model in which the reaction between a liner made of Si
3N
4 and a crucible made of SiO
2 was taken into account to study the mechanism of oxygen incorporation in multicrystalline silicon for a solar cell grown by the unidirectional solidification method. The equilibrium oxygen concentration in the case of the unidirectional solidification method was calculated by taking into account the two interfaces between a quartz crucible and a liner of Si
3N
4 and between a liner of Si
3N
4 and silicon melt. The calculated equilibrium oxygen concentration was less than half of that in the case of the Czochralski method, in which oxygen was directly dissolved from a quartz crucible into the melt. We also calculated the distribution of oxygen concentration in a silicon crystal by using numerical calculation with global modeling. The equilibrium concentrations of oxygen in the two cases were used as boundary conditions at the interface between silicon melt and quartz crucible in the numerical calculation. The results of numerical calculation by taking into account the Si
3N
4 coating were found to be close to the experimental results. From these results, we concluded that oxygen was incorporated from a quartz crucible into the melt through the coating material of Si
3N
4 during the growth process.</description><subject>A1. Directional solidification</subject><subject>A1. Impurities</subject><subject>Applied sciences</subject><subject>B2. Semiconducting silicon</subject><subject>B3. Solar cells</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Growth from melts; zone melting and refining</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Natural energy</subject><subject>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Solidification</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkM1u1TAQhSMEEpfCKyBvYJeLHed3B6qgRarEpl1bE_9c5sqxb8cJIjxBHxuHW7qtNJrZfOfMzCmK94LvBRftp-P-qGlNB4r7ivN-v1XdvCh2ou9k2XBevSx2uVclr-r-dfEmpSPnWSn4rni4_WlpimYNMKEGzyCAXxMmFh2Lv9eDDQyDjnSKBDPGwBzFiQG7X4DmP0zTonH0lpmFMBxYih4Numz1D84m0-Jn3A6cwXsMliX0qDejSBsOxLT1_m3xyoFP9t3jvCjuvn29vbwub35cfb_8clPqWg5zOY7SCQe8Msb2Yw8wQmtMZw20Uo-NMb12brTSOtcMjZCtkV3VDHLoYJBQ1fKi-Hj2PVG8X2ya1YRpOwCCjUtSsmn7NnMZbM-gppgSWadOhBPQqgRXW_DqqP4Hr7bg1VZ1k4UfHjdAyok6gqAxPakrPohKdEPmPp85m9_9hZZU0miDtgbJ6lmZiM-t-gvccKNJ</recordid><startdate>20081101</startdate><enddate>20081101</enddate><creator>Matsuo, Hitoshi</creator><creator>Bairava Ganesh, R.</creator><creator>Nakano, Satoshi</creator><creator>Liu, Lijun</creator><creator>Kangawa, Yoshihiro</creator><creator>Arafune, Koji</creator><creator>Ohshita, Yoshio</creator><creator>Yamaguchi, Masafumi</creator><creator>Kakimoto, Koichi</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20081101</creationdate><title>Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell</title><author>Matsuo, Hitoshi ; Bairava Ganesh, R. ; Nakano, Satoshi ; Liu, Lijun ; Kangawa, Yoshihiro ; Arafune, Koji ; Ohshita, Yoshio ; Yamaguchi, Masafumi ; Kakimoto, Koichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c439t-bb3f1fa02dde8b8aaba6dd7eda63cb5dd8cffbe3eff595136d37259397a93a243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1. Directional solidification</topic><topic>A1. Impurities</topic><topic>Applied sciences</topic><topic>B2. Semiconducting silicon</topic><topic>B3. Solar cells</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Growth from melts; zone melting and refining</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Natural energy</topic><topic>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Solidification</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Matsuo, Hitoshi</creatorcontrib><creatorcontrib>Bairava Ganesh, R.</creatorcontrib><creatorcontrib>Nakano, Satoshi</creatorcontrib><creatorcontrib>Liu, Lijun</creatorcontrib><creatorcontrib>Kangawa, Yoshihiro</creatorcontrib><creatorcontrib>Arafune, Koji</creatorcontrib><creatorcontrib>Ohshita, Yoshio</creatorcontrib><creatorcontrib>Yamaguchi, Masafumi</creatorcontrib><creatorcontrib>Kakimoto, Koichi</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Matsuo, Hitoshi</au><au>Bairava Ganesh, R.</au><au>Nakano, Satoshi</au><au>Liu, Lijun</au><au>Kangawa, Yoshihiro</au><au>Arafune, Koji</au><au>Ohshita, Yoshio</au><au>Yamaguchi, Masafumi</au><au>Kakimoto, Koichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell</atitle><jtitle>Journal of crystal growth</jtitle><date>2008-11-01</date><risdate>2008</risdate><volume>310</volume><issue>22</issue><spage>4666</spage><epage>4671</epage><pages>4666-4671</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We proposed an oxygen transport model in which the reaction between a liner made of Si
3N
4 and a crucible made of SiO
2 was taken into account to study the mechanism of oxygen incorporation in multicrystalline silicon for a solar cell grown by the unidirectional solidification method. The equilibrium oxygen concentration in the case of the unidirectional solidification method was calculated by taking into account the two interfaces between a quartz crucible and a liner of Si
3N
4 and between a liner of Si
3N
4 and silicon melt. The calculated equilibrium oxygen concentration was less than half of that in the case of the Czochralski method, in which oxygen was directly dissolved from a quartz crucible into the melt. We also calculated the distribution of oxygen concentration in a silicon crystal by using numerical calculation with global modeling. The equilibrium concentrations of oxygen in the two cases were used as boundary conditions at the interface between silicon melt and quartz crucible in the numerical calculation. The results of numerical calculation by taking into account the Si
3N
4 coating were found to be close to the experimental results. From these results, we concluded that oxygen was incorporated from a quartz crucible into the melt through the coating material of Si
3N
4 during the growth process.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.08.045</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2008-11, Vol.310 (22), p.4666-4671 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35686243 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | A1. Directional solidification A1. Impurities Applied sciences B2. Semiconducting silicon B3. Solar cells Cross-disciplinary physics: materials science rheology Energy Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Natural energy Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Photovoltaic conversion Physics Solar cells. Photoelectrochemical cells Solar energy Solidification Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T02%3A40%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermodynamical%20analysis%20of%20oxygen%20incorporation%20from%20a%20quartz%20crucible%20during%20solidification%20of%20multicrystalline%20silicon%20for%20solar%20cell&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Matsuo,%20Hitoshi&rft.date=2008-11-01&rft.volume=310&rft.issue=22&rft.spage=4666&rft.epage=4671&rft.pages=4666-4671&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2008.08.045&rft_dat=%3Cproquest_cross%3E35686243%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=35686243&rft_id=info:pmid/&rft_els_id=S0022024808007768&rfr_iscdi=true |