Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off li...

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Veröffentlicht in:	Materials science forum 2009-01, Vol.600-603, p.1067-1070
Hauptverfasser:	Takeuchi, Yuuichi, Sugiyama, Naohiro, Malhan, Rajesh Kumar, Rashid, S.J., Amaratunga, G.A.J., Reimann, T., Udrea, F., Kataoka, Mitsuhiro
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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