Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET
Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off li...
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| Veröffentlicht in: | Materials science forum 2009-01, Vol.600-603, p.1067-1070 |
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| creator | Takeuchi, Yuuichi Sugiyama, Naohiro Malhan, Rajesh Kumar Rashid, S.J. Amaratunga, G.A.J. Reimann, T. Udrea, F. Kataoka, Mitsuhiro |
| description | Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction
field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS
= 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for
normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching
losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that
changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt.
Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the
high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong
influence of channel doping conditions on the turn-on switching performance. The fast switching
normally-off JFET devices require heavily doped narrow JFET channel design. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.600-603.1067 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35673162</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>35673162</sourcerecordid><originalsourceid>FETCH-LOGICAL-c510t-68e2e35bdede92154267e9786d20747606e8915c76f10aca5249fb58684074d83</originalsourceid><addsrcrecordid>eNqVkE1LAzEQhoMoWKv_YU9eJNsku_nYoyz9UKoVqueQpolN2e7WJGXtvzelgmcPwzDzvrzMPAA8YJSXiIhR3_d50M600Vmn89bE0ctykjOEIENFjhHjF2CAGSOw4pRcggEilEJacnYNbkLYIlRggdkA1MveRb1x7Wf2Zrzt_E612mSdzcZ7F9W3U01zzKa-69vs9aSmES6szcoZXLo6e56M32_BlVVNMHe_fQg-0raewfli-lQ_zqGmGEXIhCGmoKu1WZuKYFoSxk3FBVsTxNNliBlRYao5sxgprSgpK7uigoky6WtRDMH9OXfvu6-DCVHuXNCmaVRrukOQBWW8wIwkY302at-F4I2Ve-92yh8lRvIEUCaA8g-gTABlAigTwFSFPAFMKeNzSvSqDdHojdx2B9-mF_-V8wOWUIIa</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>35673162</pqid></control><display><type>article</type><title>Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET</title><source>Scientific.net Journals</source><creator>Takeuchi, Yuuichi ; Sugiyama, Naohiro ; Malhan, Rajesh Kumar ; Rashid, S.J. ; Amaratunga, G.A.J. ; Reimann, T. ; Udrea, F. ; Kataoka, Mitsuhiro</creator><creatorcontrib>Takeuchi, Yuuichi ; Sugiyama, Naohiro ; Malhan, Rajesh Kumar ; Rashid, S.J. ; Amaratunga, G.A.J. ; Reimann, T. ; Udrea, F. ; Kataoka, Mitsuhiro</creatorcontrib><description>Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction
field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS
= 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for
normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching
losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that
changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt.
Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the
high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong
influence of channel doping conditions on the turn-on switching performance. The fast switching
normally-off JFET devices require heavily doped narrow JFET channel design.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.600-603.1067</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2009-01, Vol.600-603, p.1067-1070</ispartof><rights>2009 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c510t-68e2e35bdede92154267e9786d20747606e8915c76f10aca5249fb58684074d83</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/768?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Takeuchi, Yuuichi</creatorcontrib><creatorcontrib>Sugiyama, Naohiro</creatorcontrib><creatorcontrib>Malhan, Rajesh Kumar</creatorcontrib><creatorcontrib>Rashid, S.J.</creatorcontrib><creatorcontrib>Amaratunga, G.A.J.</creatorcontrib><creatorcontrib>Reimann, T.</creatorcontrib><creatorcontrib>Udrea, F.</creatorcontrib><creatorcontrib>Kataoka, Mitsuhiro</creatorcontrib><title>Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET</title><title>Materials science forum</title><description>Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction
field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS
= 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for
normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching
losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that
changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt.
Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the
high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong
influence of channel doping conditions on the turn-on switching performance. The fast switching
normally-off JFET devices require heavily doped narrow JFET channel design.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqVkE1LAzEQhoMoWKv_YU9eJNsku_nYoyz9UKoVqueQpolN2e7WJGXtvzelgmcPwzDzvrzMPAA8YJSXiIhR3_d50M600Vmn89bE0ctykjOEIENFjhHjF2CAGSOw4pRcggEilEJacnYNbkLYIlRggdkA1MveRb1x7Wf2Zrzt_E612mSdzcZ7F9W3U01zzKa-69vs9aSmES6szcoZXLo6e56M32_BlVVNMHe_fQg-0raewfli-lQ_zqGmGEXIhCGmoKu1WZuKYFoSxk3FBVsTxNNliBlRYao5sxgprSgpK7uigoky6WtRDMH9OXfvu6-DCVHuXNCmaVRrukOQBWW8wIwkY302at-F4I2Ve-92yh8lRvIEUCaA8g-gTABlAigTwFSFPAFMKeNzSvSqDdHojdx2B9-mF_-V8wOWUIIa</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Takeuchi, Yuuichi</creator><creator>Sugiyama, Naohiro</creator><creator>Malhan, Rajesh Kumar</creator><creator>Rashid, S.J.</creator><creator>Amaratunga, G.A.J.</creator><creator>Reimann, T.</creator><creator>Udrea, F.</creator><creator>Kataoka, Mitsuhiro</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090101</creationdate><title>Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET</title><author>Takeuchi, Yuuichi ; Sugiyama, Naohiro ; Malhan, Rajesh Kumar ; Rashid, S.J. ; Amaratunga, G.A.J. ; Reimann, T. ; Udrea, F. ; Kataoka, Mitsuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c510t-68e2e35bdede92154267e9786d20747606e8915c76f10aca5249fb58684074d83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takeuchi, Yuuichi</creatorcontrib><creatorcontrib>Sugiyama, Naohiro</creatorcontrib><creatorcontrib>Malhan, Rajesh Kumar</creatorcontrib><creatorcontrib>Rashid, S.J.</creatorcontrib><creatorcontrib>Amaratunga, G.A.J.</creatorcontrib><creatorcontrib>Reimann, T.</creatorcontrib><creatorcontrib>Udrea, F.</creatorcontrib><creatorcontrib>Kataoka, Mitsuhiro</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takeuchi, Yuuichi</au><au>Sugiyama, Naohiro</au><au>Malhan, Rajesh Kumar</au><au>Rashid, S.J.</au><au>Amaratunga, G.A.J.</au><au>Reimann, T.</au><au>Udrea, F.</au><au>Kataoka, Mitsuhiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET</atitle><jtitle>Materials science forum</jtitle><date>2009-01-01</date><risdate>2009</risdate><volume>600-603</volume><spage>1067</spage><epage>1070</epage><pages>1067-1070</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction
field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS
= 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for
normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching
losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that
changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt.
Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the
high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong
influence of channel doping conditions on the turn-on switching performance. The fast switching
normally-off JFET devices require heavily doped narrow JFET channel design.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.600-603.1067</doi><tpages>4</tpages></addata></record> |
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| title | Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET |
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