Silicon Carbide Differential Amplifiers for High-Temperature Sensing

This paper presents silicon carbide sensor interface circuits and techniques for MEMSbased sensors operating in harsh environments. More specifically, differential amplifiers were constructed using integrated, depletion-mode, n-channel, 6H-SiC JFETs and off-chip passive components. A three-stage vol...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Mehregany, Mehran, Neudeck, Philip G., Fu, Xiao An, Garverick, Steven, Patil, Amita, Beheim, Glenn M.
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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