Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions

The stacking fault formation in highly nitrogen-doped n+ 4H-SiC single crystal substrates during high temperature treatment has been investigated in terms of the surface preparation conditions of substrates. Substrates with a relatively large surface roughness showed a resistivity increase after ann...

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Hauptverfasser:	Nakabayashi, Masashi, Tsuge, Hiroshi, Ohtani, Noboru, Aigo, Takashi, Hoshino, Taizo, Yashiro, Hirokatsu, Katsuno, Masakazu, Fujimoto, Tatsuo, Tatsumi, Kohei
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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