Self-Heating of 4H-SiC PiN Diodes at High Current Densities
Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and theoretically in dc and 8-ms single pulse modes. To simulate the self-heating, an electro-thermal model was used to calculate non-isothermal current-voltage characteristics at dc and current-time dependences at pulsed...
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| creator | Palmour, John W. Levinshtein, Michael E. Ivanov, Pavel A. Hull, Brett A. Mnatsakanov, Tigran T. Das, Mrinal K. |
| description | Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and
theoretically in dc and 8-ms single pulse modes. To simulate the self-heating, an electro-thermal
model was used to calculate non-isothermal current-voltage characteristics at dc and current-time
dependences at pulsed measurements. The dynamic instability of N-type was observed: the current
decreases in spite of increasing of bias applied to the structure. At dc, irreversible diode degradation
was found to occur at a current density of about 1700 A/cm2. Under a single current surge 8-ms
pulse, the loss of thermal stability has been found at a current density of approximately 9000 A/cm2.
Comparison of experimental data and simulations showed that the local temperature in the diode
base at the end of the 8-ms, 9000-A/cm2 pulse reaches 2000 – 2300 K. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.600-603.1007 |
| format | Conference Proceeding |
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theoretically in dc and 8-ms single pulse modes. To simulate the self-heating, an electro-thermal
model was used to calculate non-isothermal current-voltage characteristics at dc and current-time
dependences at pulsed measurements. The dynamic instability of N-type was observed: the current
decreases in spite of increasing of bias applied to the structure. At dc, irreversible diode degradation
was found to occur at a current density of about 1700 A/cm2. Under a single current surge 8-ms
pulse, the loss of thermal stability has been found at a current density of approximately 9000 A/cm2.
Comparison of experimental data and simulations showed that the local temperature in the diode
base at the end of the 8-ms, 9000-A/cm2 pulse reaches 2000 – 2300 K.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.600-603.1007</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2009, Vol.600-603, p.1007-1010</ispartof><rights>2009 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c444t-96a1969011882aa48c82aae49e79015257e1b9ac0a26b03d2815546a9503b443</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/768?width=600</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Palmour, John W.</creatorcontrib><creatorcontrib>Levinshtein, Michael E.</creatorcontrib><creatorcontrib>Ivanov, Pavel A.</creatorcontrib><creatorcontrib>Hull, Brett A.</creatorcontrib><creatorcontrib>Mnatsakanov, Tigran T.</creatorcontrib><creatorcontrib>Das, Mrinal K.</creatorcontrib><title>Self-Heating of 4H-SiC PiN Diodes at High Current Densities</title><title>Materials science forum</title><description>Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and
theoretically in dc and 8-ms single pulse modes. To simulate the self-heating, an electro-thermal
model was used to calculate non-isothermal current-voltage characteristics at dc and current-time
dependences at pulsed measurements. The dynamic instability of N-type was observed: the current
decreases in spite of increasing of bias applied to the structure. At dc, irreversible diode degradation
was found to occur at a current density of about 1700 A/cm2. Under a single current surge 8-ms
pulse, the loss of thermal stability has been found at a current density of approximately 9000 A/cm2.
Comparison of experimental data and simulations showed that the local temperature in the diode
base at the end of the 8-ms, 9000-A/cm2 pulse reaches 2000 – 2300 K.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqVkF1LwzAUhoMoOKf_IVfeSLokTdIGr6RzVpgfsN2HLEu3jK6dScrw35sxwWsvDi8cXp7DeQB4IDhjmJaT4_GYBeNsF13jTNbZOHlbzDKBMRI4zwjGxQUYESEokgWnl2CEKeeIs0Jcg5sQdhjnpCRiBB4Xtm1QbXV03Qb2DWQ1WrgKfrp3OHX92gaoI6zdZgurwft0EU5tF1x0NtyCq0a3wd795hgsZ8_Lqkbzj5fX6mmODGMsIik0kUJiQsqSas1KcwrLpC3SklNeWLKS2mBNxQrna1oSzpnQkuN8xVg-Bvdn7MH3X4MNUe1dMLZtdWf7Iaici_SXpKlYnYvG9yF426iDd3vtvxXB6uRNJW_qz5tK3lTyppK3NLk6eUuU5zMlet2FaM1W7frBd-nDf3F-ABdOfdw</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Palmour, John W.</creator><creator>Levinshtein, Michael E.</creator><creator>Ivanov, Pavel A.</creator><creator>Hull, Brett A.</creator><creator>Mnatsakanov, Tigran T.</creator><creator>Das, Mrinal K.</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090101</creationdate><title>Self-Heating of 4H-SiC PiN Diodes at High Current Densities</title><author>Palmour, John W. ; Levinshtein, Michael E. ; Ivanov, Pavel A. ; Hull, Brett A. ; Mnatsakanov, Tigran T. ; Das, Mrinal K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c444t-96a1969011882aa48c82aae49e79015257e1b9ac0a26b03d2815546a9503b443</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Palmour, John W.</creatorcontrib><creatorcontrib>Levinshtein, Michael E.</creatorcontrib><creatorcontrib>Ivanov, Pavel A.</creatorcontrib><creatorcontrib>Hull, Brett A.</creatorcontrib><creatorcontrib>Mnatsakanov, Tigran T.</creatorcontrib><creatorcontrib>Das, Mrinal K.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Palmour, John W.</au><au>Levinshtein, Michael E.</au><au>Ivanov, Pavel A.</au><au>Hull, Brett A.</au><au>Mnatsakanov, Tigran T.</au><au>Das, Mrinal K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Self-Heating of 4H-SiC PiN Diodes at High Current Densities</atitle><btitle>Materials science forum</btitle><date>2009-01-01</date><risdate>2009</risdate><volume>600-603</volume><spage>1007</spage><epage>1010</epage><pages>1007-1010</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>Self-heating in high-voltage 4H-SiC PiN diodes has been studied experimentally and
theoretically in dc and 8-ms single pulse modes. To simulate the self-heating, an electro-thermal
model was used to calculate non-isothermal current-voltage characteristics at dc and current-time
dependences at pulsed measurements. The dynamic instability of N-type was observed: the current
decreases in spite of increasing of bias applied to the structure. At dc, irreversible diode degradation
was found to occur at a current density of about 1700 A/cm2. Under a single current surge 8-ms
pulse, the loss of thermal stability has been found at a current density of approximately 9000 A/cm2.
Comparison of experimental data and simulations showed that the local temperature in the diode
base at the end of the 8-ms, 9000-A/cm2 pulse reaches 2000 – 2300 K.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.600-603.1007</doi><tpages>4</tpages></addata></record> |
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| title | Self-Heating of 4H-SiC PiN Diodes at High Current Densities |
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