SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch
Today a main focus in high efficiency power electronics based on silicon carbide (SiC) lies on the development of an unipolar SiC switch. This paper comments on the advantages of SiC switching devices in comparison to silicon (Si) switches, the decision for the SiC JFET against the SiC MOSFET, and w...
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| Format: | Tagungsbericht |
| Sprache: | eng |
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