Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol–gel process
Bi 1− x Ce x FeO 3 ( x = 0, 0.05, 0.1, 0.15 and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si 3 N 4 /Si substrates by sol–gel technique. Crystal structures, surface chemical compositions and bonding states of BCFO films were investigated by X-ray diffraction and X-ray photoelectron spectrosco...
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| creator | Quan, Zuci Hu, Hao Xu, Sheng Liu, Wei Fang, Guojia Li, Meiya Zhao, Xingzhong |
| description | Bi
1−
x
Ce
x
FeO
3
(
x
= 0, 0.05, 0.1, 0.15 and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si
3
N
4
/Si substrates by sol–gel technique. Crystal structures, surface chemical compositions and bonding states of BCFO films were investigated by X-ray diffraction and X-ray photoelectron spectroscopy (XPS), respectively. Compared to BiFeO
3
(BFO) counterparts, the fitted XPS narrow-scan spectra of Bi 4f
7/2
, Bi 4f
5/2
, Fe 2p
3/2
, Fe 2p
1/2
and O 1s peaks for Bi
0.8
Ce
0.2
FeO
3
film shift towards higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58 and 0.49 eV, respectively. Dielectric constants and loss tangents of the BCFO (
x
= 0, 0.1 and 0.2) film capacitors are 159, 131, 116, 0.048, 0.041 and 0.035 at 1 MHz, respectively. Bi
0.8
Ce
0.2
FeO
3
film has a higher remnant polarization (
P
r
= 2.04 μC/cm
2
) than that of the BFO (
P
r
= 1.08 μC/cm
2
) at 388 kV/cm. Leakage current density of the Bi
0.8
Ce
0.2
FeO
3
capacitor is 1.47 × 10
−4
A/cm
2
at 388 kV/cm, which is about two orders of magnitude lower than that of the BFO counterpart. Furthermore, Ce cations are feasibly substituted for Bi
3+
in the Bi
0.8
Ce
0.2
FeO
3
matrix, possibly resulting in the enhanced ferroelectric properties for the decreased grain sizes and the reduced oxygen vacancies. |
| doi_str_mv | 10.1007/s10971-008-1825-x |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_35548800</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2259559842</sourcerecordid><originalsourceid>FETCH-LOGICAL-c373t-ea46f5e782795719c71d202cfed9b0a833cb4d442d027ddbf206abb13b663b303</originalsourceid><addsrcrecordid>eNp1kc-KFDEQxoMoOK4-gLeA6K218q-TPuqwq8LCHtRzyJ_KbJae7jbpgZ2b7-Ab-iRmmEVB8FRQ9auvPuoj5CWDtwxAv6sMBs06ANMxw1V3_4hsmNKik0b2j8kGBm460KCfkme13gGAkkxvyPLlUJILSMMt7nNwI_XzFPO0o3V1K1bqpkgTljLjiGEtOeT1SOdEt9jFecFIP-QrvBF0vc0TTXncV7oUXFxpI3-kdR5__fi5w7F154C1PidPkhsrvnioF-Tb1eXX7afu-ubj5-376y4ILdYOneyTQm24HpRmQ9AscuAhYRw8OCNE8DJKySNwHaNPHHrnPRO-74UXIC7Im7Nuu_v9gHW1-1wDjqObcD5UK5SSxsAJfPUPeDcfytS8Wc7VoNRgJG8UO1OhzLUWTHYpee_K0TKwpwTsOQHbErCnBOx923n9oOxq-2wqbgq5_lnkYCQDPTSOn7naRtMOy18H_xf_DfjMl6Y</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2259559842</pqid></control><display><type>article</type><title>Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol–gel process</title><source>SpringerLink Journals - AutoHoldings</source><creator>Quan, Zuci ; Hu, Hao ; Xu, Sheng ; Liu, Wei ; Fang, Guojia ; Li, Meiya ; Zhao, Xingzhong</creator><creatorcontrib>Quan, Zuci ; Hu, Hao ; Xu, Sheng ; Liu, Wei ; Fang, Guojia ; Li, Meiya ; Zhao, Xingzhong</creatorcontrib><description>Bi
1−
x
Ce
x
FeO
3
(
x
= 0, 0.05, 0.1, 0.15 and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si
3
N
4
/Si substrates by sol–gel technique. Crystal structures, surface chemical compositions and bonding states of BCFO films were investigated by X-ray diffraction and X-ray photoelectron spectroscopy (XPS), respectively. Compared to BiFeO
3
(BFO) counterparts, the fitted XPS narrow-scan spectra of Bi 4f
7/2
, Bi 4f
5/2
, Fe 2p
3/2
, Fe 2p
1/2
and O 1s peaks for Bi
0.8
Ce
0.2
FeO
3
film shift towards higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58 and 0.49 eV, respectively. Dielectric constants and loss tangents of the BCFO (
x
= 0, 0.1 and 0.2) film capacitors are 159, 131, 116, 0.048, 0.041 and 0.035 at 1 MHz, respectively. Bi
0.8
Ce
0.2
FeO
3
film has a higher remnant polarization (
P
r
= 2.04 μC/cm
2
) than that of the BFO (
P
r
= 1.08 μC/cm
2
) at 388 kV/cm. Leakage current density of the Bi
0.8
Ce
0.2
FeO
3
capacitor is 1.47 × 10
−4
A/cm
2
at 388 kV/cm, which is about two orders of magnitude lower than that of the BFO counterpart. Furthermore, Ce cations are feasibly substituted for Bi
3+
in the Bi
0.8
Ce
0.2
FeO
3
matrix, possibly resulting in the enhanced ferroelectric properties for the decreased grain sizes and the reduced oxygen vacancies.</description><identifier>ISSN: 0928-0707</identifier><identifier>EISSN: 1573-4846</identifier><identifier>DOI: 10.1007/s10971-008-1825-x</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Bismuth ferrite ; Capacitors ; Ceramics ; Cerium ; Chemical bonds ; Chemical composition ; Chemistry ; Chemistry and Materials Science ; Colloidal gels. Colloidal sols ; Colloidal state and disperse state ; Composites ; Crystal structure ; Exact sciences and technology ; Fast Track Communications ; Ferroelectric materials ; Ferroelectricity ; General and physical chemistry ; Glass ; Grain size ; Inorganic Chemistry ; Leakage current ; Materials Science ; Nanotechnology ; Natural Materials ; Optical and Electronic Materials ; Organic chemistry ; Photoelectrons ; Silicon substrates ; Sol-gel processes ; Spectrum analysis ; Tangents ; Thin films ; X ray photoelectron spectroscopy ; X-ray diffraction</subject><ispartof>Journal of sol-gel science and technology, 2008-12, Vol.48 (3), p.261-266</ispartof><rights>Springer Science+Business Media, LLC 2008</rights><rights>2009 INIST-CNRS</rights><rights>Journal of Sol-Gel Science and Technology is a copyright of Springer, (2008). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-ea46f5e782795719c71d202cfed9b0a833cb4d442d027ddbf206abb13b663b303</citedby><cites>FETCH-LOGICAL-c373t-ea46f5e782795719c71d202cfed9b0a833cb4d442d027ddbf206abb13b663b303</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10971-008-1825-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10971-008-1825-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20841079$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Quan, Zuci</creatorcontrib><creatorcontrib>Hu, Hao</creatorcontrib><creatorcontrib>Xu, Sheng</creatorcontrib><creatorcontrib>Liu, Wei</creatorcontrib><creatorcontrib>Fang, Guojia</creatorcontrib><creatorcontrib>Li, Meiya</creatorcontrib><creatorcontrib>Zhao, Xingzhong</creatorcontrib><title>Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol–gel process</title><title>Journal of sol-gel science and technology</title><addtitle>J Sol-Gel Sci Technol</addtitle><description>Bi
1−
x
Ce
x
FeO
3
(
x
= 0, 0.05, 0.1, 0.15 and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si
3
N
4
/Si substrates by sol–gel technique. Crystal structures, surface chemical compositions and bonding states of BCFO films were investigated by X-ray diffraction and X-ray photoelectron spectroscopy (XPS), respectively. Compared to BiFeO
3
(BFO) counterparts, the fitted XPS narrow-scan spectra of Bi 4f
7/2
, Bi 4f
5/2
, Fe 2p
3/2
, Fe 2p
1/2
and O 1s peaks for Bi
0.8
Ce
0.2
FeO
3
film shift towards higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58 and 0.49 eV, respectively. Dielectric constants and loss tangents of the BCFO (
x
= 0, 0.1 and 0.2) film capacitors are 159, 131, 116, 0.048, 0.041 and 0.035 at 1 MHz, respectively. Bi
0.8
Ce
0.2
FeO
3
film has a higher remnant polarization (
P
r
= 2.04 μC/cm
2
) than that of the BFO (
P
r
= 1.08 μC/cm
2
) at 388 kV/cm. Leakage current density of the Bi
0.8
Ce
0.2
FeO
3
capacitor is 1.47 × 10
−4
A/cm
2
at 388 kV/cm, which is about two orders of magnitude lower than that of the BFO counterpart. Furthermore, Ce cations are feasibly substituted for Bi
3+
in the Bi
0.8
Ce
0.2
FeO
3
matrix, possibly resulting in the enhanced ferroelectric properties for the decreased grain sizes and the reduced oxygen vacancies.</description><subject>Bismuth ferrite</subject><subject>Capacitors</subject><subject>Ceramics</subject><subject>Cerium</subject><subject>Chemical bonds</subject><subject>Chemical composition</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Colloidal gels. Colloidal sols</subject><subject>Colloidal state and disperse state</subject><subject>Composites</subject><subject>Crystal structure</subject><subject>Exact sciences and technology</subject><subject>Fast Track Communications</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>General and physical chemistry</subject><subject>Glass</subject><subject>Grain size</subject><subject>Inorganic Chemistry</subject><subject>Leakage current</subject><subject>Materials Science</subject><subject>Nanotechnology</subject><subject>Natural Materials</subject><subject>Optical and Electronic Materials</subject><subject>Organic chemistry</subject><subject>Photoelectrons</subject><subject>Silicon substrates</subject><subject>Sol-gel processes</subject><subject>Spectrum analysis</subject><subject>Tangents</subject><subject>Thin films</subject><subject>X ray photoelectron spectroscopy</subject><subject>X-ray diffraction</subject><issn>0928-0707</issn><issn>1573-4846</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kc-KFDEQxoMoOK4-gLeA6K218q-TPuqwq8LCHtRzyJ_KbJae7jbpgZ2b7-Ab-iRmmEVB8FRQ9auvPuoj5CWDtwxAv6sMBs06ANMxw1V3_4hsmNKik0b2j8kGBm460KCfkme13gGAkkxvyPLlUJILSMMt7nNwI_XzFPO0o3V1K1bqpkgTljLjiGEtOeT1SOdEt9jFecFIP-QrvBF0vc0TTXncV7oUXFxpI3-kdR5__fi5w7F154C1PidPkhsrvnioF-Tb1eXX7afu-ubj5-376y4ILdYOneyTQm24HpRmQ9AscuAhYRw8OCNE8DJKySNwHaNPHHrnPRO-74UXIC7Im7Nuu_v9gHW1-1wDjqObcD5UK5SSxsAJfPUPeDcfytS8Wc7VoNRgJG8UO1OhzLUWTHYpee_K0TKwpwTsOQHbErCnBOx923n9oOxq-2wqbgq5_lnkYCQDPTSOn7naRtMOy18H_xf_DfjMl6Y</recordid><startdate>20081201</startdate><enddate>20081201</enddate><creator>Quan, Zuci</creator><creator>Hu, Hao</creator><creator>Xu, Sheng</creator><creator>Liu, Wei</creator><creator>Fang, Guojia</creator><creator>Li, Meiya</creator><creator>Zhao, Xingzhong</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20081201</creationdate><title>Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol–gel process</title><author>Quan, Zuci ; Hu, Hao ; Xu, Sheng ; Liu, Wei ; Fang, Guojia ; Li, Meiya ; Zhao, Xingzhong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-ea46f5e782795719c71d202cfed9b0a833cb4d442d027ddbf206abb13b663b303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Bismuth ferrite</topic><topic>Capacitors</topic><topic>Ceramics</topic><topic>Cerium</topic><topic>Chemical bonds</topic><topic>Chemical composition</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Colloidal gels. Colloidal sols</topic><topic>Colloidal state and disperse state</topic><topic>Composites</topic><topic>Crystal structure</topic><topic>Exact sciences and technology</topic><topic>Fast Track Communications</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>General and physical chemistry</topic><topic>Glass</topic><topic>Grain size</topic><topic>Inorganic Chemistry</topic><topic>Leakage current</topic><topic>Materials Science</topic><topic>Nanotechnology</topic><topic>Natural Materials</topic><topic>Optical and Electronic Materials</topic><topic>Organic chemistry</topic><topic>Photoelectrons</topic><topic>Silicon substrates</topic><topic>Sol-gel processes</topic><topic>Spectrum analysis</topic><topic>Tangents</topic><topic>Thin films</topic><topic>X ray photoelectron spectroscopy</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Quan, Zuci</creatorcontrib><creatorcontrib>Hu, Hao</creatorcontrib><creatorcontrib>Xu, Sheng</creatorcontrib><creatorcontrib>Liu, Wei</creatorcontrib><creatorcontrib>Fang, Guojia</creatorcontrib><creatorcontrib>Li, Meiya</creatorcontrib><creatorcontrib>Zhao, Xingzhong</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of sol-gel science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Quan, Zuci</au><au>Hu, Hao</au><au>Xu, Sheng</au><au>Liu, Wei</au><au>Fang, Guojia</au><au>Li, Meiya</au><au>Zhao, Xingzhong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol–gel process</atitle><jtitle>Journal of sol-gel science and technology</jtitle><stitle>J Sol-Gel Sci Technol</stitle><date>2008-12-01</date><risdate>2008</risdate><volume>48</volume><issue>3</issue><spage>261</spage><epage>266</epage><pages>261-266</pages><issn>0928-0707</issn><eissn>1573-4846</eissn><abstract>Bi
1−
x
Ce
x
FeO
3
(
x
= 0, 0.05, 0.1, 0.15 and 0.20) (BCFO) thin films were deposited on Pt/TiN/Si
3
N
4
/Si substrates by sol–gel technique. Crystal structures, surface chemical compositions and bonding states of BCFO films were investigated by X-ray diffraction and X-ray photoelectron spectroscopy (XPS), respectively. Compared to BiFeO
3
(BFO) counterparts, the fitted XPS narrow-scan spectra of Bi 4f
7/2
, Bi 4f
5/2
, Fe 2p
3/2
, Fe 2p
1/2
and O 1s peaks for Bi
0.8
Ce
0.2
FeO
3
film shift towards higher binding energy regions by amounts of 0.33, 0.29, 0.43, 0.58 and 0.49 eV, respectively. Dielectric constants and loss tangents of the BCFO (
x
= 0, 0.1 and 0.2) film capacitors are 159, 131, 116, 0.048, 0.041 and 0.035 at 1 MHz, respectively. Bi
0.8
Ce
0.2
FeO
3
film has a higher remnant polarization (
P
r
= 2.04 μC/cm
2
) than that of the BFO (
P
r
= 1.08 μC/cm
2
) at 388 kV/cm. Leakage current density of the Bi
0.8
Ce
0.2
FeO
3
capacitor is 1.47 × 10
−4
A/cm
2
at 388 kV/cm, which is about two orders of magnitude lower than that of the BFO counterpart. Furthermore, Ce cations are feasibly substituted for Bi
3+
in the Bi
0.8
Ce
0.2
FeO
3
matrix, possibly resulting in the enhanced ferroelectric properties for the decreased grain sizes and the reduced oxygen vacancies.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s10971-008-1825-x</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0928-0707 |
| ispartof | Journal of sol-gel science and technology, 2008-12, Vol.48 (3), p.261-266 |
| issn | 0928-0707 1573-4846 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35548800 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Bismuth ferrite Capacitors Ceramics Cerium Chemical bonds Chemical composition Chemistry Chemistry and Materials Science Colloidal gels. Colloidal sols Colloidal state and disperse state Composites Crystal structure Exact sciences and technology Fast Track Communications Ferroelectric materials Ferroelectricity General and physical chemistry Glass Grain size Inorganic Chemistry Leakage current Materials Science Nanotechnology Natural Materials Optical and Electronic Materials Organic chemistry Photoelectrons Silicon substrates Sol-gel processes Spectrum analysis Tangents Thin films X ray photoelectron spectroscopy X-ray diffraction |
| title | Surface chemical bonding states and ferroelectricity of Ce-doped BiFeO3 thin films prepared by sol–gel process |
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