Normally-Off 4H-SiC Vertical JFET with Large Current Density

We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an abrupt junction between the gate and the channel was simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated drain cur...

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Bibliographische Detailangaben

Hauptverfasser:	Onose, Yasuo, Someya, Tomoyuki, Onose, Hidekatsu, Yokoyama, Natsuki, Shimizu, Haruka
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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