Normally-Off 4H-SiC Vertical JFET with Large Current Density
We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an abrupt junction between the gate and the channel was simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated drain cur...
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| creator | Onose, Yasuo Someya, Tomoyuki Onose, Hidekatsu Yokoyama, Natsuki Shimizu, Haruka |
| description | We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with
large current density. The effect of forming an abrupt junction between the gate and the channel was
simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated
drain current density (500 A/cm2) and a low specific on-resistance (2.0 mWcm2) were achieved for
small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold
voltage by forming the abrupt junction between the gate and the channel. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.600-603.1059 |
| format | Conference Proceeding |
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large current density. The effect of forming an abrupt junction between the gate and the channel was
simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated
drain current density (500 A/cm2) and a low specific on-resistance (2.0 mWcm2) were achieved for
small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold
voltage by forming the abrupt junction between the gate and the channel.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.600-603.1059</identifier><language>eng</language><publisher>Trans Tech Publications Ltd</publisher><ispartof>Materials science forum, 2009, Vol.600-603, p.1059-1062</ispartof><rights>2009 Trans Tech Publications Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c444t-7665c619a0f909a3393c411cc83aaf47f42c7b21312521d8933a202fc58ae9383</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/768?width=600</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Onose, Yasuo</creatorcontrib><creatorcontrib>Someya, Tomoyuki</creatorcontrib><creatorcontrib>Onose, Hidekatsu</creatorcontrib><creatorcontrib>Yokoyama, Natsuki</creatorcontrib><creatorcontrib>Shimizu, Haruka</creatorcontrib><title>Normally-Off 4H-SiC Vertical JFET with Large Current Density</title><title>Materials science forum</title><description>We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with
large current density. The effect of forming an abrupt junction between the gate and the channel was
simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated
drain current density (500 A/cm2) and a low specific on-resistance (2.0 mWcm2) were achieved for
small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold
voltage by forming the abrupt junction between the gate and the channel.</description><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqVkL1OwzAURi0EEqXwDplYkFP_J5FYUGgpqNChwGoZY1NXaVJsR1HfHldFYma4usv3nat7ALjBKGeIlJNhGPKgnWmjs07nrYmT59UsFwhBgWiOEa9OwAgLQWBVcHIKRohwDjkrxDm4CGGDEMUlFiNw-9L5rWqaPVxam7E5XLk6ezc-Oq2a7Gk2fc0GF9fZQvkvk9W99-lodm_a4OL-EpxZ1QRz9bvH4C0V6jlcLB8e67sF1IyxCAshuBa4UshWqFKUVlQzjLUuqVKWFZYRXXwQTDHhBH-WFaWKIGI1L5WpaEnH4PrI3fnuuzchyq0L2jSNak3XB0k5pxiLIgXrY1D7LgRvrNx5t1V-LzGSB3MymZN_5mQyJ5M5mcylofJgLlGmR0r0qg3R6LXcdL1v04v_4vwA28R_Ng</recordid><startdate>20090101</startdate><enddate>20090101</enddate><creator>Onose, Yasuo</creator><creator>Someya, Tomoyuki</creator><creator>Onose, Hidekatsu</creator><creator>Yokoyama, Natsuki</creator><creator>Shimizu, Haruka</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20090101</creationdate><title>Normally-Off 4H-SiC Vertical JFET with Large Current Density</title><author>Onose, Yasuo ; Someya, Tomoyuki ; Onose, Hidekatsu ; Yokoyama, Natsuki ; Shimizu, Haruka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c444t-7665c619a0f909a3393c411cc83aaf47f42c7b21312521d8933a202fc58ae9383</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Onose, Yasuo</creatorcontrib><creatorcontrib>Someya, Tomoyuki</creatorcontrib><creatorcontrib>Onose, Hidekatsu</creatorcontrib><creatorcontrib>Yokoyama, Natsuki</creatorcontrib><creatorcontrib>Shimizu, Haruka</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Onose, Yasuo</au><au>Someya, Tomoyuki</au><au>Onose, Hidekatsu</au><au>Yokoyama, Natsuki</au><au>Shimizu, Haruka</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Normally-Off 4H-SiC Vertical JFET with Large Current Density</atitle><btitle>Materials science forum</btitle><date>2009-01-01</date><risdate>2009</risdate><volume>600-603</volume><spage>1059</spage><epage>1062</epage><pages>1059-1062</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with
large current density. The effect of forming an abrupt junction between the gate and the channel was
simulated, and vertical JFETs were then fabricated with abrupt junctions. As a result, a large rated
drain current density (500 A/cm2) and a low specific on-resistance (2.0 mWcm2) were achieved for
small devices. The blocking voltage was 600 V. These results were due to a reduction of the threshold
voltage by forming the abrupt junction between the gate and the channel.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.600-603.1059</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0255-5476 |
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| title | Normally-Off 4H-SiC Vertical JFET with Large Current Density |
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